DataSheet.es    


PDF MTE030N15RQ8 Data sheet ( Hoja de datos )

Número de pieza MTE030N15RQ8
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes Cystech Electonics 
Logotipo Cystech Electonics Logotipo



Hay una vista previa y un enlace de descarga de MTE030N15RQ8 (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! MTE030N15RQ8 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE030N15RQ8
Spec. No. : C838Q8
Issued Date : 2016.06.29
Revised Date :
Page No. : 1/9
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=6A
150V
5.6A
29.5 mΩ(typ)
Symbol
MTE030N15RQ8
Outline
DD
SOP-8
DD
GGate
DDrain
SSource
Pin 1
G
SSS
Ordering Information
Device
MTE030N15RQ8-0-T3-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE030N15RQ8
CYStek Product Specification

1 page




MTE030N15RQ8 pdf
CYStech Electronics Corp.
Spec. No. : C838Q8
Issued Date : 2016.06.29
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
1000
Capacitance vs Drain-to-Source Voltage
Ciss
C oss
100
Threshold Voltage vs Junction Tempearture
1.4
1.2
1.0 ID=1mA
0.8
10
f=1MHz
Crss
1
0 20 40 60
VDS, Drain-Source Voltage(V)
80
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
2 VDS=75V
ID=6A
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
Maximum Drain Current vs Junction Temperature
8
RDS(ON)
10 Limited
100μs
1 1ms
10ms
0.1 TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
100ms
1s
DC
0.01
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
6
4
2
TA=25°C,RθJA=40°C/W,VGS=10V
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTE030N15RQ8
CYStek Product Specification

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet MTE030N15RQ8.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MTE030N15RQ8N-Channel Enhancement Mode Power MOSFETCystech Electonics
Cystech Electonics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar