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даташит 50N06 PDF ( Datasheet )

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Номер произв 50N06
Описание Power-Transistor
Производители Tuofeng Semiconductor
логотип Tuofeng Semiconductor логотип 



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50N06 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V DS
R DS(on),max SMDversion
ID
60 V
15 m
50 A
Type
50N06
50N06
2
Package
Marking
1
3
TO-251
50N06
1
23
TO-252
50N06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D TC =25 °C1)
Pulsed drain current
I D,pulse T C=25 °C2)
Avalanche energy, single pulse
E AS I D=50 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=48 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 160A
2) See figure 3
1
Value
50
400
810
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C









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50N06 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 0.5 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250uA
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
60
2.1
-
3
-V
4
Zero gate voltage drain current
I DSS
V jDS=48 V, V GS=0 V,
T =25 °C
-
0.01
1 µA
Gate-source leakage current
I GSS
V GS= ±20 V, V DS=0 V
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=50 A
-
± 50 nA
15 m
Gate resistance
Transconductance
R G - 1.9 -
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
74
148
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
2









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50N06 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=50 A, R G=2.2
-
-
-
-
-
-
-
4600
1500
350
21
31
59
30
6100 pF
2000
525
32 ns
47
88
45
Gate Charge Characteristics4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 24 32 nC
Q g(th)
- 9.7 13
Q gd V DD=30 V, I D=50 A,
Q sw V GS=0 to 10 V
-
-
51 76
65 95
Q g - 126 167
V plateau
- 5.2 - V
Q oss
V DD=30 V, V GS=0 V
-
47 62
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
V SD
t rr
Q rr
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=30 V, I F=I S,
di F/dt =50 A/µs
- - 100 A
- - 400
- 0.93 1.3 V
- 60 75 ns
- 130 160 nC
4) See figure 16 for gate charge parameter definition
3










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