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PDF AO3414 Data sheet ( Hoja de datos )

Número de pieza AO3414
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Tuofeng Semiconductor　
Logotipo Tuofeng Semiconductor Logotipo



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No Preview Available ! AO3414 Hoja de datos, Descripción, Manual

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3414
AO3414
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3414 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3414 is Pb-free
(meets ROHS & Sony 259 specifications). AO3414
is a Green Product ordering option. AO3414
is electrically identical.
Features
VDS (V) = 20V
ID = 4.2 A (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 63mΩ (VGS = 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
4.2
3.2
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W

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