AO3406 PDF даташит
Спецификация AO3406 изготовлена «Tuofeng Semiconductor» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | AO3406 |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | Tuofeng Semiconductor |
логотип |
4 Pages
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3406
AO3406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3406 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3406 is Pb-free
(meets ROHS & Sony 259 specifications). AO3406
is a Green Product ordering option. AO3406
is electrically identical.
Features
VDS (V) = 30V
ID = 3.6A (VGS = 10V)
RDS(ON) < 65mΩ (VGS = 10V)
RDS(ON) < 105mΩ (VGS = 4.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
3.6
2.9
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=3.6A
VGS=4.5V, ID=2.8A
Forward Transconductance
VDS=5V, ID=3.6A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
30
TJ=55°C
1
15
1
5
100
1.9 3
50 65
75 105
7
0.79 1
2.5
V
µA
nA
V
A
mΩ
mΩ
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
288 375
57
39
36
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=3.6A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.2Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3.6A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/µs
6.5 8.5
3.1 4
1.2
1.6
4.6
1.9
20.1
2.6
10.2 14
3.5
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 5 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
9
6
3
6V
4.5V
4V
3.5V
VGS=3V
10
8 VDS=5V
6
4
125°C
2
25°C
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics
0
1.5
2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
5
100
90
80 VGS=4.5V
70
60
50
VGS=10V
40
0 2 4 6 8 10
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.8
ID=3.6A
1.6 VGS=4.5V
1.4 VGS=10V
1.2
1
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
200
ID=3.6A
150
100 125°C
50 25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°
1.0E-02
1.0E-03
25°
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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