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9435 PDF даташит

Спецификация 9435 изготовлена ​​​​«Tuofeng Semiconductor» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв 9435
Описание P-Channel Enhancement Mode MOSFET
Производители Tuofeng Semiconductor
логотип Tuofeng Semiconductor логотип 

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9435 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
9435
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-30V/-5.3A, RDS(ON) = 60m(typ.) @ VGS = -10V
RDS(ON) = 90m(typ.) @ VGS = -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Applications
S1
S2
S3
G4
8D
7D
6D
5D
SO 8
S SS
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
DD DD
P-Channel MOSFET
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
VDSS
VGSS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
Rating
-30
±20
-4.6
-20
Unit
V
A
TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
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9435 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
9435
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
PD
TJ)TSTG
RθJA
Parameter
Maximum Power Dissipation
TA = 25°C
TA = 100°C
Maximum Operating and Storage Junction Temperature
Thermal Resistance - Junction to Ambient
Rating
2.5
1.0
-55 to 150
50
Unit
W
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA
IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
IGSS Gate Leakage Current
VGS=±20V, VDS =0V
VGS=-10V, ID=-5.3A
RDS(ON)
Drain-Source On-state Resistance b
VGS=-4.5V, ID=-4.2A
VSD Diode Forward Voltage b
ISD=-3A, VGS=0V
Dynamica
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=-15V, VGS=-10V,
ID=-4.6A
VDD=-25V, RL=12.5,
ID=-2A , VGEN=-10V,
RG=6,
VGS=0V, VDS=-25V
Frequency = 1.0MHZ
Notes
a : Guaranteed by design, not subject to production testing
b : Pulse test ; pulse width 300µs, duty cycle 2%
9435
Min. Typa. Max.
Unit
-30 V
-1 uA
-1 -3 V
±100 nA
50 60
m
80 90
-0.6 -1.3 V
22.5
4.5
2
8
8
35
11
845
120
80
29
17
18
60
28
nC
ns
pF
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9435 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
9435
Typical Characteristics
Output Characteristics
20
-VGS=5,6,7,8,9,10V
-VGS=4V
15
10
-VGS=3V
5
0
0 2 4 6 8 10
-VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
20
15
10
TJ=25°C
5
TJ=125°C
TJ=-55°C
0
012345
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-IDS=250µA
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
0.16
0.14
0.12
0.10
0.08
0.06
-VGS=4.5V
-VGS=10V
0.04
0.02
0.00
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0
-ID - Drain Current (A)
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