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4953 PDF даташит

Спецификация 4953 изготовлена ​​​​«Tuofeng Semiconductor» и имеет функцию, называемую «Dual 30V P-Channel PowerTrench MOSFET».

Детали детали

Номер произв 4953
Описание Dual 30V P-Channel PowerTrench MOSFET
Производители Tuofeng Semiconductor
логотип Tuofeng Semiconductor логотип 

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4953 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3td
4953
Dual 30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–5.3 A, –30 V
RDS(ON) = 59 m@ VGS = –10 V
RDS(ON) = 89 m@ VGS = –4.5 V
Low gate charge (6nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD1DD22D2
DD1
SO-8
Pin 1 SO-8
S2GG2
SS1GS1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
4953
4953
13’’
5
6 Q1
7
Q2
8
4
3
2
1
Ratings
–30
±20
–5.3
–20
2
1.6
1
0.9
–55 to +175
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units









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4953 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., L4t9d 53
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
BV DSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
V GS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –24 V,
VGS = –20 V,
VGS = 20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–30
–1
V
–23 mV/°C
–1
–100
100
µA
nA
nA
–1.7 –3
V
4.5 mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –5.3 A
VGS = –4.5 V, ID = –4.2 A
54 59 m
84 89
ID(on) On–State Drain Current
gFS Forward Transconductance
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6
VDS = –15 V, ID = –5 A,
VGS = –5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.6 A (Note 2)
–20
10
A
S
528 pF
132 pF
70 pF
7 14
13 24
14 25
9 17
69
2.2
2
ns
ns
ns
ns
nC
nC
nC
–1.3
–0.8 –1.28
A
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCAis determined by the user's board design.









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4953 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4953
Typical Characteristics
30
VGS = -10V
-6.0V
-5.0V
V
-4.5V
20 V
-4.0V
10
-3.5V
-3.0V
0
0 12 34 5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
6
Figure 1. On-Region Characteristics.
1.6
ID = -5A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
15
VDS = -5V
12
9
6
T A = -55oC
25oC
125oC
3
0
1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
VGS=-4.0V
1.6
-4.0V
1.4 -5.0V
-6.0V
1.2
-7.0V
-8.0V
-10V
1
0.8
0
6 12 18 24
-ID, DRAIN CURRENT (A)
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
0.2
ID = -2.5A
0.15
0.1
0.05
T A = 25oC
TA = 125oC
0
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10
1
0.1
0.01
VGS =0V
TA = 125oC
25oC
-55 oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.










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