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4835 PDF даташит

Спецификация 4835 изготовлена ​​​​«Tuofeng Semiconductor» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв 4835
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители Tuofeng Semiconductor
логотип Tuofeng Semiconductor логотип 

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4835 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-30V/-8A, RDS(ON) = 16m(typ.) @ VGS = -10V
RDS(ON) = 24m(typ.) @ VGS = -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Applications
S1
S2
S3
G4
8D
7D
6D
5D
SO 8
S SS
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
DD DD
P-Channel MOSFET
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
-30
V
±25
-8
A
-50
*Surface Mounted on FR4 Board, t 10 sec.
TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
1









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4835 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθJA
Parameter
Maximum Power Dissipation
Maximum Junction Temperature
TA = 25°C
TA = 100°C
Storage Temperature Range
Thermal Resistance - Junction to Ambient
Rating
2.5
1
150
-55 to 150
50
Unit
W
°C
°C/W
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
IDSS
VGS(th)
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
VGS=0V, ID= -250µA
VDS= -30V, VGS=0V
VDS=VGS, ID= -250µA
VGS= ±25V , VDS=0V
RDS(ON)
Drain-Source On-state Resistance b VGS= -10V, ID= -8A
VGS= -4.5V, ID= -5A
VSD Diode Forward Voltage b
ISD= -3A, VGS=0V
Dynamica
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS= -15V, VGS= -10V,
ID= -4.6A
VDD= -25V, ID= -2A,
VGEN= -10V, RG=6
RL=12.5
VGS=0V, VDS=-25V
Frequency = 1.0MHZ
Notes
a : Guaranteed by design, not subject to production testing
b : Pulse test ; pulse width 500µs, duty cycle 2%
APM4835
Min. Typa. Max.
Unit
-30 V
-1 µA
-1 -1.5 -2 V
±100 nA
16 19
m
24 30
-0.7 -1.3 V
48
10
9
16
17
75
31
3800
590
250
60
30
30
120
80
nC
ns
pF
2









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4835 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
Typical Characteristics
Output Characteristics
50
-VGS=4,5,6,7,8,9,10V
40
30
20
-VGS=3V
10
0
0 2 4 6 8 10
-VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
50
40
30
TJ=125°C
20
TJ=25°C
TJ=-55°C
10
0
012345
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-IDS=250µA
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
0.05
0.04
0.03 -VGS=4.5V
0.02 -VGS=10V
0.01
0.00
0
10 20 30 40
-ID - Drain Current (A)
50
3










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