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PDF 4812 Data sheet ( Hoja de datos )
| Número de pieza | 4812 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4812
4812
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The 4812 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in buck
converters. 4812 is Pb-free (meets ROHS & Sony
259 specifications). 4812 is a Green Product
ordering option. 4812 is electrically identical.
Features
VDS (V) = 30V
ID = 8.0A (VGS = 10V)
RDS(ON) < 22mΩ (VGS = 10V)
RDS(ON) < 34mΩ (VGS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
8.0
30
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 4812.PDF ] | |
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