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4611 PDF даташит

Спецификация 4611 изготовлена ​​​​«Tuofeng Semiconductor» и имеет функцию, называемую «60V Dual P + N-Channel MOSFET».

Детали детали

Номер произв 4611
Описание 60V Dual P + N-Channel MOSFET
Производители Tuofeng Semiconductor
логотип Tuofeng Semiconductor логотип 

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4611 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4611
60V Dual P + N-Channel MOSFET
Product Summary
N-Channel
VDS (V) = 60V
ID = 6.3A (VGS=10V)
RDS(ON)
< 38m(VGS=10V)
< 45m(VGS=4.5V)
100% UIS Tested
100% Rg Tested
P-Channel
-60V
-4.9A
< 65m(VGS = -10V)
< 78m(VGS = -4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D2 D1
S2 D2
G2 D2
S1 D1
G1 D1 G2
G1
S2 S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
Current A
TA=25°C
ID
6.3
Pulsed Drain Current B
IDM 40
Power Dissipation
TA=25°C
Junction and Storage Temperature Range
PD
TJ, TSTG
2
-55 to 150
Max p-channel
-60
±20
-4.9
-30
2
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
60
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W









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4611 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4611
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min Typ Max Units
60 V
IDSS Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
1 µA
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100 nA
1.5 2.1
3
V
40 A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6.3A
VGS=4.5V, ID=5.7A
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=5V, ID=6.3A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=30V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=6.3A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=4.7,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6.3A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs
28 38 m
35 45
27 S
0.74 1
V
3A
1920
155
116
0.65
2300
0.8
pF
pF
pF
47.6 58
24.2 30
6
14.4
7.6
5
28.9
5.5
33.2 40
43
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev5: Nov. 2010









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4611 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
4611
40
10V
30
4.5V
4V
20
10
0
0
3.5V
VGS=3V
1234
VDS (Volts)
Fig 1: On-Region Characteristics
24
5
22
VGS=4.5V
20
VGS=10V
18
16
0
5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25 VDS=5V
125°C
20
15
10
25°C
5
0
1.5
2 2.5 3 3.5
VGS(Volts)
Figure 2: Transfer Characteristics
4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS=10V
ID=6.3A
VGS=4.5V
ID=5.7A
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
50
ID=6.3A
40 125°C
30
25°C
20
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0










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