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4612 PDF даташит

Спецификация 4612 изготовлена ​​​​«Tuofeng Semiconductor» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв 4612
Описание MOSFET ( Transistor )
Производители Tuofeng Semiconductor
логотип Tuofeng Semiconductor логотип 

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4612 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
Features
n-channel
VDS (V) = 60V
ID = 4.5A (VGS=10V)
RDS(ON)
< 55m(VGS=10V)
< 60m(VGS=4.5V)
p-channel
-60V
-3.2A (VGS = -10V)
RDS(ON)
< 80m (VGS = -10V)
< 95m (VGS = -4.5V)
D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
Current A
TA=25°C
ID
4.5
Pulsed Drain Current B
IDM 20
Max p-channel
-60
±20
-3.2
-20
Units
V
V
A
Power Dissipation
TA=25°C
PD
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
t 10s
Steady-State
Steady-State
2
-55 to 150
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
2
-55 to 150
W
°C
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 60 °C/W
48 62.5 °C/W
74 110 °C/W
35 40 °C/W









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4612 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min Typ Max Units
60 V
IDSS Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
1 µA
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100 nA
1 2.1 3
V
20 A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=10V, ID=4.5A
VGS=4.5V, ID=3A
Forward Transconductance
VDS=5V, ID=4.5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
46 55 m
50 60 m
11 S
0.74 1
V
3A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=4.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=6.7,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs
450 540
60
25
1.65 2
pF
pF
pF
8.5 10.5
4.3 5.5
1.6
2.2
4.7 7
2.3 4.5
15.7 24
1.9 4
27.5 35
32
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005









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4612 Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
20
10V
15
10
5.0V
4.5V
15
VDS=5V
10
125°C
4.0V
5
VGS=3.5V
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics
5
25°C
0
2 2.5 3 3.5 4 4.5 5
VGS(Volts)
Figure 2: Transfer Characteristics
100
90
80
70 VGS=4.5V
60
50
40 VGS=10V
30
20
0
5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS=10V
ID=4.5A
VGS=4.5V
ID=3.0A
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
140
ID=4.5A
120
100
125°C
80
60 25°C
40
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0










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