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PDF B772 Data sheet ( Hoja de datos )
| Número de pieza | B772 | |
| Descripción | PNP Transistor | |
| Fabricantes | JCST | |
| Logotipo |  |
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1. B772  Hay una vista previa y un enlace de descarga de B772 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
B772 TRANSISTOR (PNP)
FEATURES
Low Speed Switching
TO-126
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3 BASE
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Power Dissipation
RӨJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value
-40
-30
-6
-3
1.25
100
150
-55-150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test conditions
IC=-100μA ,IE=0
IC= -10mA , IB=0
IE= -100μA,IC=0
VCB= -40V, IE=0
VCE=-30V, IB=0
VEB=-6V, IC=0
VCE= -2V, IC= -1A
IC=-2A, IB= -0.2A
IC=-2A, IB= -0.2A
VCE= -5V, IC=-0.1A
f =10MHz
Min
-40
-30
-6
60
50
Typ
80
Max
-1
-10
-1
400
-0.5
-1.5
Unit
V
V
V
μA
μA
μA
V
V
MHz
CLASSIFICATION OF hFE
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
B,Dec,2011
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet B772.PDF ] | |
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