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IXFH18N60X PDF даташит

Спецификация IXFH18N60X изготовлена ​​​​«IXYS» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IXFH18N60X
Описание Power MOSFET ( Transistor )
Производители IXYS
логотип IXYS логотип 

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IXFH18N60X Даташит, Описание, Даташиты
X-Class HiPerFETTM
Power MOSFET
Preliminary Technical Information
IXFA18N60X
IXFP18N60X
IXFH18N60X
VDSS =
ID25 =
RDS(on)
600V
18A
230m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263 AA (IXFA)
G
S
D (Tab)
TO-220AB (IXFP)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TLTL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
600
600
30
40
V
V
V
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
18
36
5
500
50
320
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-247 & TO-220)
1.13 / 10
N/lb
Nm/lb.in
TO-263
TO-220
TO-247
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
600 V
2.5 4.5 V
100 nA
10 A
500 A
230 m
© 2015 IXYS CORPORATION, All Rights Reserved
GD S
TO-247 (IXFH)
D (Tab)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100660A(5/15)









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IXFH18N60X Даташит, Описание, Даташиты
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
RthJC
RthCS
TO-220
TO-247
IXFA18N60X
Characteristic Values
Min. Typ. Max
6 10
S
3.3
1440
1110
14
pF
pF
pF
IXFP18N60X
IXFH18N60X
84 pF
255 pF
20
30
63
24
35
8
18
0.50
0.21
ns
ns
ns
ns
nC
nC
nC
0.39 C/W
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 9A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
18
A
72 A
1.4 V
127 ns
705 nC
11 A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537









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IXFH18N60X Даташит, Описание, Даташиты
18
16
14
12
10
8
6
4
2
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
9V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5 4
VDS - Volts
4.5
18
16
14
12
10
8
6
4
2
0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = 10V
8V
7V
6V
5V
1 2 3 4 5 6 7 8 9 10 11
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 9A Value vs.
Drain Current
4.5
4.0 VGS = 10V
3.5
TJ = 125ºC
3.0
2.5
TJ = 25ºC
2.0
1.5
1.0
0.5
0
5 10 15 20 25 30 35 40 45
ID - Amperes
IXFA18N60X IXFP18N60X
IXFH18N60X
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
45
40 VGS = 10V
35
9V
30
25 8V
20
15 7V
10
5 6V
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 9A Value vs.
Junction Temperature
3.8
3.4 VGS = 10V
3.0
2.6
I D = 18A
2.2
1.8
I D = 9A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8
0.7 VGS(th)
0.6
0.5
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2015 IXYS CORPORATION, All Rights Reserved










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Номер в каталогеОписаниеПроизводители
IXFH18N60PPolarHV HiPerFET Power MOSFETIXYS Corporation
IXYS Corporation
IXFH18N60XPower MOSFET ( Transistor )IXYS
IXYS

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