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IXD75IF650NA PDF даташит

Спецификация IXD75IF650NA изготовлена ​​​​«IXYS» и имеет функцию, называемую «XPT IGBT».

Детали детали

Номер произв IXD75IF650NA
Описание XPT IGBT
Производители IXYS
логотип IXYS логотип 

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IXD75IF650NA Даташит, Описание, Даташиты
XPT IGBT
Trench IGBT (medium speed)
Copack
Part number
IXD75IF650NA
IXD75IF650NA
VCES
I C25
VCE(sat)
=
=
=
tentative
650 V
75 A
1.5 V
(G) 1
2 (C)
3 (E)
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131204









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IXD75IF650NA Даташит, Описание, Даташиты
IGBT
Symbol
VCES
VGES
VGEM
I C25
I C100
Ptot
VCE(sat)
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
I CES
gate emitter threshold voltage
collector emitter leakage current
I GES
Q G(on)
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
I CM
SCSOA
t SC
I SC
R thJC
RthCH
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
IXD75IF650NA
tentative
Conditions
IC = 75A; VGE = 15 V
IC = 1.2mA; VGE = VCE
VCE = VCES; VGE = 0 V
VGE = ±20 V
VCE = 300 V; VGE = 15 V; IC =
inductive load
VCE = 300 V; IC = 75 A
VGE = ±15 V; RG= 10
VGE = ±15 V; RG= 10
VCEmax = 650 V
VCEmax = 360 V
VCE = 360 V; VGE = ±15 V
RG= 10 ; non-repetitive
TVJ = 25°C
TC = 25°C
TC = 100°C
TC = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
75 A
TVJ = 150°C
TVJ = 150°C
TVJ = 150°C
Ratings
min. typ. max. Unit
650 V
20 V
tbd V
75 A
tbd A
tbd W
1.5 1.7 V
1.75 V
5 5.8 6.5 V
0.1 mA
0.1 mA
500 nA
130 nC
25 ns
45 ns
120 ns
40 ns
1.1 mJ
1.7 mJ
150 A
300
0.10
10 µs
A
tbd K/W
K/W
Diode
VRRM
I F25
IF 100
VF
max. repetitive reverse voltage
forward current
forward voltage
IR reverse current
Qrr
I RM
t rr
E rec
R thJC
R thCH
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
IF = 75A
VR = VRRM
VR = 300 V
-diF /dt = 1200 A/µs
IF = 75A; VGE = 0 V
TVJ = 25°C
TC = 25°C
TC = 100°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
1.80
0.75
7
55
100
1.5
0.10
650 V
tbd A
tbd A
2.00 V
V
0.15 mA
mA
µC
A
ns
mJ
1 K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131204









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IXD75IF650NA Даташит, Описание, Даташиты
IXD75IF650NA
Package SOT-227B (minibloc)
Symbol Definition
I RMS
TVJ
T op
Tstg
Weight
RMS current
virtual junction temperature
operation temperature
storage temperature
Conditions
per terminal 1)
MD
M
T
d Spp/App
d Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL 1 mA
1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
tentative
Ratings
min. typ. max. Unit
150 A
-40 175 °C
-40 150 °C
-40 150 °C
30 g
1.1 1.5 Nm
1.1 1.5 Nm
10.5 3.2
mm
8.6 6.8
mm
3000
V
2500
V
Product Marking
Part No.
Logo
XXXXX ®
Zyyww
abcd
Assembly Line
DateCode
Assembly Code
Part number
I = IGBT
X = XPT IGBT
D = Trench 1 / std
75 = Current Rating [A]
IF = Copack
650 = Reverse Voltage [V]
NA = SOT-227B (minibloc)
Ordering
Standard
Part Number
IXD75IF650NA
Marking on Product
IXD75IF650NA
Delivery Mode
Tube
Quantity Code No.
10 513716
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
* on die level
T VJ = 175 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131204










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IXD75IF650NAXPT IGBTIXYS
IXYS

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