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IXA220I650NA PDF даташит

Спецификация IXA220I650NA изготовлена ​​​​«IXYS» и имеет функцию, называемую «XPT IGBT».

Детали детали

Номер произв IXA220I650NA
Описание XPT IGBT
Производители IXYS
логотип IXYS логотип 

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IXA220I650NA Даташит, Описание, Даташиты
XPT IGBT
Single IGBT
Part number
IXA220I650NA
IXA220I650NA
VCES
I C25
VCE(sat)
=
=
=
tentative
650 V
255 A
1.6 V
(G) 2
(C) 3
(E) 1+4
Backside: isolated
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Base plate: Copper
internally DCB isolated
Advanced power cycling
Either emitter terminal can be used
as main or Kelvin emitter
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140708









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IXA220I650NA Даташит, Описание, Даташиты
IGBT
Symbol
VCES
VGES
VGEM
I C25
I C80
Ptot
VCE(sat)
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
I CES
gate emitter threshold voltage
collector emitter leakage current
I GES
Q G(on)
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
I CM
SCSOA
t SC
I SC
R thJC
RthCH
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
IXA220I650NA
tentative
Conditions
TVJ = 25°C
TC = 25°C
TC = 80°C
TC = 25°C
IC = 200A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
IC = 3.2mA; VGE = VCE
TVJ = 25°C
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
VGE = ±20 V
VCE = 300 V; VGE = 15 V; IC = 200 A
inductive load
VCE = 300 V; IC = 200 A
VGE = ±15 V; RG= 3.9
VGE = ±15 V; RG= 3.9
VCEmax = 650 V
VCEmax = 650 V
VCE = 360 V; VGE = ±15 V
RG= 3.9 ; non-repetitive
TVJ = 125°C
TVJ = 125°C
TVJ = 125°C
Ratings
min. typ. max. Unit
650 V
±20 V
±30 V
255 A
156 A
625 W
1.6 1.8 V
1.9 V
4 4.8 5.5 V
0.1 mA
0.1 mA
500 nA
280 nC
30 ns
50 ns
100 ns
40 ns
2 mJ
7.6 mJ
400 A
800
0.10
10 µs
A
0.2 K/W
K/W
Diode
VRRM
I F25
IF 80
VF
max. repetitive reverse voltage
forward current
forward voltage
IR
Qrr
I RM
t rr
E rec
R thJC
R thCH
reverse current
* not applicable, see Ices at IGBT
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
IF = A
VR = VRRM
VR = 300 V
-diF /dt =
A/µs
IF = A; VGE = 0 V
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
650 V
tbd A
tbd A
tbd V
tbd V
* mA
* mA
tbd µC
tbd A
tbd ns
tbd mJ
tbd K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140708









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IXA220I650NA Даташит, Описание, Даташиты
IXA220I650NA
Package SOT-227B (minibloc)
Symbol Definition
I RMS
TVJ
T op
Tstg
Weight
RMS current
virtual junction temperature
operation temperature
storage temperature
Conditions
per terminal 1)
MD
M
T
d Spp/App
d Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL 1 mA
1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
tentative
Ratings
min. typ. max. Unit
150 A
-40 150 °C
-40 125 °C
-40 150 °C
30 g
1.1 1.5 Nm
1.1 1.5 Nm
10.5 3.2
mm
8.6 6.8
mm
3000
V
2500
V
Product Marking
Part No.
Logo
XXXXX ®
Zyyww
abcd
Assembly Line
DateCode
Assembly Code
Part description
I = IGBT
X = XPT IGBT
A = Gen 1 / std
220 = Current Rating [A]
I = Single IGBT
650 = Reverse Voltage [V]
NA = SOT-227B (minibloc)
Ordering
Standard
Ordering Number
IXA220I650NA
Marking on Product
IXA220I650NA
Delivery Mode
Tube
Quantity Code No.
10 514555
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
* on die level
IGBT
1.1
5.3
T VJ = 150 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140708










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IXA220I650NAXPT IGBTIXYS
IXYS

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