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CPC3980 PDF даташит

Спецификация CPC3980 изготовлена ​​​​«IXYS» и имеет функцию, называемую «N-Channel Depletion-Mode Vertical DMOS FET».

Детали детали

Номер произв CPC3980
Описание N-Channel Depletion-Mode Vertical DMOS FET
Производители IXYS
логотип IXYS логотип 

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CPC3980 Даташит, Описание, Даташиты
INTEGRATED CIRCUITS DIVISION
BVDSX/
BVDGX
800V
RDS(on)
(max)
45
IDSS (min)
100mA
Package
SOT-223
Features
High Breakdown Voltage: 800V
Low On-Resistance: 45max. at 25ºC
Low VGS(off) Voltage: -1.4 to -3.1V
High Input Impedance
Small Package Size: SOT-223
Applications
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Current Regulators
Package Pinout
D
4
123
GDS
CPC3980
N-Channel Depletion-Mode
Vertical DMOS FET
Description
The CPC3980 is an 800V, N-channel,
depletion-mode, Field Effect Transistor (FET) created
using IXYS Integrated Circuits Division’s proprietary
vertical DMOS process. Yielding a robust device with
high input impedance, this process enables world
class, high voltage MOSFET performance with an
economical silicon gate architecture.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown, which makes the CPC3980 ideal for use
in high-power applications.
The CPC3980 is a highly reliable FET device that
has been used extensively in IXYS Integrated Circuits
Division’s Solid State Relays for industrial and
telecommunications applications.
The CPC3980 is available in the SOT-223 package.
Ordering Information
Part #
CPC3980ZTR
Description
SOT-223: Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
DS-CPC3980-R02
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CPC3980 Даташит, Описание, Даташиты
INTEGRATED CIRCUITS DIVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings Units
Drain-to-Source Voltage
800 V
Gate-to-Source Voltage
±15 V
Pulsed Drain Current
Total Package Dissipation 1
150 mA
1.8 W
Operational Temperature
-55 to +125 ºC
Junction Temperature, Maximum
+125 ºC
Storage Temperature
-55 to +125 ºC
1 Mounted on 1"x1" 2 oz. Copper FR4 board.
CPC3980
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in VGS(off) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current
Static Drain-to-Source On-State Resistance
Change in RDS(on) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Voltage Drop
Thermal Resistance
Junction to Ambient
Junction to Case
Symbol
BVDSX
VGS(off)
dVGS(off) /dT
IGSS
ID(off)
IDSS
RDS(on)
dRDS(on) /dT
Gfs
CISS
COSS
CRSS
VSD
JA
JC
Conditions
VGS= -5.5V, ID=100µA
VDS= 15V, ID=1A
VDS= 15V, ID=1A
VGS=±15V, VDS=0V
VGS= -5.5V, VDS=800V
VGS= 0V, VDS=15V
VGS= 0V, ID=100mA, VDS=10V
ID= 50mA, VDS = 10V
VGS= -3.5V
VDS= 25V
f= 1MHz
VGS= -5V, ISD=150mA
-
-
Min Typ Max Units
800 - - V
-1.4 - -3.1 V
- - 4.5 mV/ºC
- - 100 nA
- - 1 µA
100 -
- mA
- - 45
- - 2.5 %/ºC
100 -
-m
115
- 5 - pF
3
- 0.72 1
V
- 55 -
ºC/W
- 23 -
2
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CPC3980 Даташит, Описание, Даташиты
INTEGRATED CIRCUITS DIVISION
CPC3980
PERFORMANCE DATA @25ºC (Unless Otherwise Noted)*
Threshold Voltage vs. Temperature
(ID=1PA, VDS=10V)
-1.6
-1.7
-1.8
-1.9
-2.0
-2.1
-50 -25
0 25 50 75 100 125
Temperature (ºC)
On-Resistance vs. Temperature
(ID=100mA, VGS=5V)
70
60
50
40
30
20
-50 -25
0 25 50 75 100 125
Temperature (ºC)
Power Dissipation
vs. Ambient Temperature
2.0
1.5
1.0
0.5
0.0
0
20 40 60 80 100 120 140
Temperature (ºC)
Forward Safe Operating Bias
(VGS=0, DC Load)
1
Capacitance vs. Drain-Source Voltage
1000
(VGS=3.5V)
0.1
0.01
Limited by device RDS(on)
100
10
CISS
CRSS
COSS
Limited by device channel saturation
0.001
0.1
1 10 100
Voltage (V)
1000
1
0 5 10 15 20 25 30
VDS (V)
100
80
60
40
20
0
0
Output Characteristics
VGS= -1
VGS= -1.2
VGS= -1.4
VGS= -1.6
2 4 6 8 10
VDS (V)
On-Resistance vs. Drain Current
(VGS=0V)
40
35
30
25
20
0
20 40 60 80 100
ID (mA)
120
100
80
60
40
20
0
-2.5
Input Admittance
(VDS=10V)
85ºC
55ºC
25ºC
-40ºC
-2.0 -1.5 -1.0
VGS (V)
Transconductance vs. Drain Current
(VDS=10V)
300 -40ºC
250
25ºC
55ºC
85ºC
200
150
100
50
0
-0.5 0 20 40 60 80 100
ID (mA)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R02 www.ixysic.com
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