NTE16005 PDF даташит
Спецификация NTE16005 изготовлена «NTE» и имеет функцию, называемую «Silicon Complementary Transistors». |
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Детали детали
Номер произв | NTE16005 |
Описание | Silicon Complementary Transistors |
Производители | NTE |
логотип |
4 Pages
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NTE16004 (PNP) & NTE16005 (NPN)
Silicon Complementary Transistors
High Current, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO) IC = 100mA, IB = 0
ICEX VCE = 100V, VBE = 1.5V
VCE = 70V, VBE = 1.5V, TC = +150°C
IEBO VBE = 7V, IC = 0
DC Current Gain
Collector–Emitter Saturation Voltage
NTE16004
NTE16005
hFE
VCE(sat)
IC = 500mA, VCE = 4V
IC = 1A, VCE = 2V
IC = 500mA, IB = 50mA
Base–Emitter ON Voltage
Small–Signal Characteristics
VBE(on) IC = 500mA, VCE = 4V
Small–Signal Current Gain
hfe IC = 50mA, VCE = 4V, f = 10MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
75 – – V
– – 0.1 mA
– – 5.0 mA
– – 0.1 mA
30 – 130
10 –
–
– – 0.7 V
– – 0.5 V
– – 1.1 V
5––
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Switching Characteristics
Turn–On Time
NTE16004
NTE16005
ton
VCC = 30V, IC = 500mA, IB1 = 50mA – – 100 ns
– – 80 ns
Turn–Off Time
NTE16004
NTE16005
toff
VCC = 30V, IC = 500mA,
IB1 = IB2 = 50mA
– – 1000 ns
– – 800 ns
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
Emitter
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)
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