(PDF) TIC216D Datasheet

Número de pieza	TIC216D
Descripción	Triacs
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Triacs isc Product Specification TIC216D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) ITSM Tj Tstg Rth(j-c) Rth(j-a) Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current (full sine wave)TC=70℃ Non-repetitive peak on-state current Operating junction temperature Storage temperature Thermal resistance, junction to case Thermal resistance, junction to ambient MIN 400 400 6 60 110 -45~150 2.5 62.5 UNIT V V A A ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ Ⅰ IGT Gate trigger current Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅲ Ⅳ IH Holding current Vsupply = 12 V†, IG= 0 initial ITM= 100mA Ⅰ VGT Gate trigger voltage Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅲ Ⅳ VTM On-state voltage IT= 8.4A; IG= 50mA MAX 2.0 5 5 5 10 30 2.2 2.2 2.2 3.0 1.7 UNIT mA mA mA V V isc website：www.iscsemi.cn 1 page

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