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PDF MBR3045PT Data sheet ( Hoja de datos )

Número de pieza MBR3045PT
Descripción Schottky Barrier Rectifier ( Diode )
Fabricantes Inchange Semiconductor　
Logotipo Inchange Semiconductor Logotipo



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No Preview Available ! MBR3045PT Hoja de datos, Descripción, Manual

INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3045PT
FEATURES
·Dual Rectifier Conduction
·High Surge Capacity
·High Current Capability, Low Forward Voltage Drop
·Guarding for Overvoltage protection
APPLICATIONS
·For use in low voltage,high frequency inverters,free wheeling,
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
IF(AV)
IFSM
TJ
Peak Repetitive Reverse Voltage
45
Average Rectified Forward Current
TC= 100℃
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave
superimposed on rated load conditions
30
200
Junction Temperature
-55~150
V
A
A
℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
6.8
UNIT
℃/W
ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF Maximum Instantaneous Forward Voltage
IR Maximum Instantaneous Reverse Current
Note: Pulse test: 300μs pulse width, 1% duty cycle
IF= 15A ; TC= 125℃
IF= 30A ; TC= 25℃
IF= 30A ; TC= 125℃
Rated DC blocking Voltage,TC= 25℃
Rated DC blocking Voltage, TC= 125℃
0.57
0.84
0.72
1.0
60
UNIT
V
mA
isc website：www.iscsemi.cn

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