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PDF IS29LV032B Data sheet ( Hoja de datos )

Número de pieza IS29LV032B
Descripción 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory
Fabricantes ISSI 
Logotipo ISSI Logotipo



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IS29LV032T/B
IS29LV032T/B
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
High performance
- Access time 70 ns
- 90 ns devices (Call Factory)
Low power consumption (typical values at
5 MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 μA current in standby or automatic
sleep mode
Flexible Sector Architecture:
- Eight 8-Kbyte sectors, sixty-three 64k-byte
sectors
- 8-Kbyte sectors for Top or Bottom boot
- Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors
Secured Silicon Sector
- Provides a 128-words area for code or data
that can be permanently protected.
- Once this sector is protected, it is prohibited
to program or erase within the sector again.
High performance program/erase speed
- Word program time: 15µs typical
- Sector erase time: 100ms typical
- Chip erase time: 8s typical
JEDEC Standard compatible
Standard DATA# polling and toggle bits
feature
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
Support JEDEC Common Flash Interface
(CFI).
Low Vcc write inhibit < 2.5V
Minimum 100K program/erase endurance
cycles
RESET# hardware reset pin
- Hardware method to reset the device to read
mode
WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm TFBGA (Call Factory)
Industrial Temperature Range (-40 to 85 C)
Automotive Grades Range (Call Factory)
GENERAL DESCRIPTION
The IS29LV032T/B is a 32-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 4,194,304 bytes or 2.097,152 words available in top or bottom boot configurations.
Any word can be programmed typically in 15µs. The IS29LV032T/B features 3.0V voltage read and
write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-
performance microprocessor systems.
The IS29LV032T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. D
07/16/2014
1

1 page




IS29LV032B pdf
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110111xxx
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111010xxx
111011xxx
111100xxx
111101xxx
111110xxx
111111000
111111001
111111010
111111011
111111100
111111101
111111110
111111111
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8/4
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28000028FFFF
29000029FFFF
2A00002AFFFF
2B00002BFFFF
2C00002CFFFF
2D00002DFFFF
2E00002EFFFF
2F00002FFFFF
30000030FFFF
31000031FFFF
32000032FFFF
33000033FFFF
34000034FFFF
35000035FFFF
36000036FFFF
37000037FFFF
38000038FFFF
39000039FFFF
3A00003AFFFF
3B00003BFFFF
3C00003CFFFF
3D00003DFFFF
3E00003EFFFF
3F00003F1FFF
3F20003F3FFF
3F40003F5FFF
3F60003F7FFF
3F80003F9FFF
3FA0003FBFFF
3FC0003FDFFF
3FE0003FFFFF
IS29LV032T/B
140000147FFF
14800014FFFF
150000157FFF
15800015FFFF
160000167FFF
16800016FFFF
170000177FFF
17800017FFFF
180000187FFF
18800018FFFF
190000197FFF
19800019FFFF
1A00001A7FFF
1A80001AFFFF
1B00001B7FFF
1B80001BFFFF
1C00001C7FFF
1C80001CFFFF
1D00001D7FFF
1D80001DFFFF
1E00001E7FFF
1E80001EFFFF
1F00001F7FFF
1F80001F8FFF
1F90001F9FFF
1FA0001FAFFF
1FB0001FBFFF
1FC0001FCFFF
1FD0001FDFFF
1FE0001FEFFF
1FF0001FFFFF
Note: The address bus is A20:A-1 in byte mode where BYTE# = VIL or A20:A0 in word mode where
BYTE# = VIH
Table 2B. Top Boot Security Sector Address (IS29LV032T)
Sector Address
A20 ~ A12
111111111
Sector Size
(bytes / words)
256 / 128
Address Range (h)
Byte mode (x8)
3FFF003FFFFF
Address Range (h)
Word Mode (x16)
1FFF801FFFFF
Integrated Silicon Solution, Inc.- www.issi.com
Rev. D
07/16/2014
5

5 Page





IS29LV032B arduino
USER MODE DEFINITIONS
Word / Byte Configuration
IS29LV032T/B
The signal set on the BYTE# pin controls whether the device data I/O pins DQ15-DQ0 operate in the
byte or word configuration. When the BYTE# Pin is set at logic 1’, then the device is in word
configuration, DQ15-DQ0 are active and are controlled by CE# and OE#.
On the other hand, if the BYTE# Pin is set at logic ‘0’, then the device is in byte configuration, and only
data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8-DQ14 are
tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
Standby Mode
The IS29LV032T/B has a CMOS-compatible standby mode, which reduces the current to < 1µA (typical).
It is placed in CMOS-compatible standby when the CE# pin is at VCC ± 0.5. RESET# and BYTE# pin
must also be at CMOS input levels. The device also has a TTL-compatible standby mode, which
reduces the maximum VCC current to < 1mA. It is placed in TTL-compatible standby when the CE# pin
is at VIH. When in standby modes, the outputs are in a high-impedance state independent of the OE#
input.
Automatic Sleep Mode
The IS29LV032T/B has an automatic sleep mode, which minimizes power consumption. The devices
will enter this mode automatically when the states of address bus remain stable for tacc + 30ns. ICC4 in
the DC Characteristics table shows the current specification. With standard access times, the device
will output new data when addresses change.
Read Mode
The device is automatically set to reading array data after device power-up or hardware reset. No
commands are required to retrieve data. The device is also ready to read array data after completing an
Embedded Program or Embedded Erase algorithm.
After the device accepts a Sector Erase Suspend command, the device enters the Sector Erase
Suspend mode. The system can read array data using the standard read timings, except that if it reads
at an address within erase-suspended sectors, the device outputs status data. After completing a
programming operation in the Sector Erase Suspend mode, the system may once again read array
data with the same exception. See “Sector Erase Suspend/Resume Commands” for more additional
information.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes
high or while in the autoselect mode. See the Reset Command” for additional details.
Output Disable Mode
When the OE# pin is at a logic high level (VIH), the output from the IS29LV032T/B is disabled. The
output pins are placed in a high impedance state.
Autoselect Identification Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ15DQ0. This mode is primarily intended for programming
equipment to automatically match a device to be programmed with its corresponding programming
algorithm. However, the autoselect codes can also be accessed in-system through the command
register.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. D
07/16/2014
11

11 Page







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