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CBS10S30 PDF даташит

Спецификация CBS10S30 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв CBS10S30
Описание Schottky Barrier Diode
Производители Toshiba
логотип Toshiba логотип 

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CBS10S30 Даташит, Описание, Даташиты
Schottky Barrier Diode Silicon Epitaxial
CBS10S30
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
CBS10S30
CST2B
1: Cathode
2: Anode
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
1.0
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
Start of commercial production
2013-09
1 2014-02-24
Rev.3.0









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CBS10S30 Даташит, Описание, Даташиты
CBS10S30
4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
VF(3)
IR
Ct
IF = 0.1 A (Pulse test)
IF = 0.5 A (Pulse test)
IF = 1 A (Pulse test)
VR = 30 V (Pulse test)
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.23
V
0.31
V
0.37 0.45 V
0.2 0.5 mA
135
pF
5. Marking
Marking Code
8C
Fig. 5.1 Marking
Part Number
CBS10S30
6. Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
2 2014-02-24
Rev.3.0









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CBS10S30 Даташит, Описание, Даташиты
7. Land Pattern Dimensions (for reference only)
CBS10S30
Fig. 7.1 Land Pattern Dimensions for Reference Only (Unit: mm)
3 2014-02-24
Rev.3.0










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Номер в каталогеОписаниеПроизводители
CBS10S30Schottky Barrier DiodeToshiba
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