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PDF BT131-600F Data sheet ( Hoja de datos )
| Número de pieza | BT131-600F | |
| Descripción | Triacs | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Triacs
isc Product Specification
BT131-600F
FEATURES
·With TO-92 package
·Glass passivated,sensitive gate triacs in a plastic envelope
·Intended for use in general purpose bidirectional switching and
phase control applications.
·These devices are intended to be interfaced directly to
microcontrollers,logic intergrated circuits and other low power
gate trigger circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
VDRM
VRRM
IT(RMS)
ITSM
PGM
PG(AV)
Tj
Tstg
Repetitive peak off-state voltage
600
Repetitive peak off-state voltage
RMS on-state current (full sine wave)
Tlead≤ 51℃
Non-repetitive peak on-state current
600
1
16
Peak gate power dissipation
5
Average gate power dissipation
0.5
Operating junction temperature
110
Storage temperature
-45~150
UNIT
V
V
A
A
W
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
VDRM
VRRM
ID
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Off-state leakage current
Ⅰ
ID=0.1mA
ID=0.5mA
VD= VDRM(max), Tj= 125℃
IGT Gate trigger current
Ⅱ
VD=12V; IT= 0.1A
Ⅲ
Ⅳ
VTM On-state voltage
IH Holding current
VGT Gate trigger voltage
IT=1.6A
IGT=0.1A ,VD= 12V
VD=12V ; RL=100Ωall quadrant
MIN MAX UNIT
600 V
600 V
0.5 mA
25
25
mA
25
70
1.6 V
5 mA
1.5 V
isc website：www.iscsemi.cn
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