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BT131-600E PDF даташит

Спецификация BT131-600E изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «4Q Triac».

Детали детали

Номер произв BT131-600E
Описание 4Q Triac
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BT131-600E Даташит, Описание, Даташиты
BT131-600E
4Q Triac
6 May 2015
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT54 plastic package. This
sensitive gate "series E" triac is intended for interfacing with low power drivers including
microcontrollers.
2. Features and benefits
Direct interfacing to logic level ICs
Direct interfacing with low power gate drivers and microcontrollers
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate in four quadrants
Triggering in all four quadrants
3. Applications
Air conditioner indoor fan control
General purpose low power motor control
General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 12.5 A
- - 1A
- - 10 mA
- - 10 mA
- - 10 mA
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BT131-600E Даташит, Описание, Даташиты
NXP Semiconductors
BT131-600E
4Q Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 10 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT131-600E
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
BT131-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 13









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BT131-600E Даташит, Описание, Даташиты
NXP Semiconductors
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IG = 20 mA; T2+ G+
IG = 20 mA; T2+ G-
IG = 20 mA; T2- G+
IG = 20 mA; T2- G-
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
1.2
IT(RMS)
(A)
0.8
003aab039
51.2 °C
3
IT(RMS)
(A)
2
BT131-600E
4Q Triac
Min Max Unit
- 600 V
- 1A
- 12.5 A
- 13.7 A
- 0.78 A2s
- 50 A/µs
- 50 A/µs
- 10 A/µs
- 50 A/µs
- 2A
- 5W
- 0.1 W
-40 150 °C
- 125 °C
003aab042
0.4 1
0
- 50
0
Tlead = 51.2 °C
50
100 150
Tlead (°C)
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
10- 2
10- 1
1 10
surge duration (s)
f = 50 Hz; Tlead = 51.2 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT131-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 13










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