BT131-600E PDF даташит
Спецификация BT131-600E изготовлена «NXP Semiconductors» и имеет функцию, называемую «4Q Triac». |
|
Детали детали
Номер произв | BT131-600E |
Описание | 4Q Triac |
Производители | NXP Semiconductors |
логотип |
13 Pages
No Preview Available ! |
BT131-600E
4Q Triac
6 May 2015
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT54 plastic package. This
sensitive gate "series E" triac is intended for interfacing with low power drivers including
microcontrollers.
2. Features and benefits
• Direct interfacing to logic level ICs
• Direct interfacing with low power gate drivers and microcontrollers
• High blocking voltage capability
• Planar passivated for voltage ruggedness and reliability
• Sensitive gate in four quadrants
• Triggering in all four quadrants
3. Applications
• Air conditioner indoor fan control
• General purpose low power motor control
• General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 12.5 A
- - 1A
- - 10 mA
- - 10 mA
- - 10 mA
Scan or click this QR code to view the latest information for this product
No Preview Available ! |
NXP Semiconductors
BT131-600E
4Q Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 10 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT131-600E
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
BT131-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 13
No Preview Available ! |
NXP Semiconductors
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 51 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IG = 20 mA; T2+ G+
IG = 20 mA; T2+ G-
IG = 20 mA; T2- G+
IG = 20 mA; T2- G-
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
1.2
IT(RMS)
(A)
0.8
003aab039
51.2 °C
3
IT(RMS)
(A)
2
BT131-600E
4Q Triac
Min Max Unit
- 600 V
- 1A
- 12.5 A
- 13.7 A
- 0.78 A2s
- 50 A/µs
- 50 A/µs
- 10 A/µs
- 50 A/µs
- 2A
- 5W
- 0.1 W
-40 150 °C
- 125 °C
003aab042
0.4 1
0
- 50
0
Tlead = 51.2 °C
50
100 150
Tlead (°C)
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
10- 2
10- 1
1 10
surge duration (s)
f = 50 Hz; Tlead = 51.2 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT131-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 13
Скачать PDF:
[ BT131-600E.PDF Даташит ]
Номер в каталоге | Описание | Производители |
BT131-600 | 4Q Triac | NXP Semiconductors |
BT131-600 | Sensitive Gate Triacs | HAOPIN |
BT131-600D | Triacs | Inchange Semiconductor |
BT131-600D | 4Q Triac | NXP Semiconductors |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |