DataSheet26.com

75N08 PDF даташит

Спецификация 75N08 изготовлена ​​​​«Inchange Semiconductor» и имеет функцию, называемую «N-Channel MOSFET Transistor».

Детали детали

Номер произв 75N08
Описание N-Channel MOSFET Transistor
Производители Inchange Semiconductor
логотип Inchange Semiconductor логотип 

2 Pages
scroll

No Preview Available !

75N08 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75N08
FEATURES
·Drain Current ID= 75A@ TC=25
·Drain Source Voltage-
: VDSS= 80V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.015Ω(Max)
DESCRIPTION
Suitable as primary switch in advanced high-efficiency, high-
frequency isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any application with low gate
drive requirements .
APPLICATIONS
·Solenoid and relay drivers
·DC motor control
·DC-DC converters DC
·Automotive environment
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse (tp10μs)
PD Total Dissipation @TC=25
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE
80
±20
75
300
137
150
-55~150
UNIT
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
0.91
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
isc&1iscsemi is registered trademark.
PDF pdfFactory Pro
www.fineprint.cn









No Preview Available !

75N08 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75N08
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
VSD Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 37.5A
VGS= ±20V; VDS= 0
VDS= 80V; VGS= 0
VDS= 60V; VGS= 0; Tj= 125
IS= 75A; VGS=0
MIN MAX UNIT
80 V
24V
0.015
Ω
±100
nA
1.0
10
μA
1.4 V
·
isc websitewww.iscsemi.cn
isc&2iscsemi is registered trademark.
PDF pdfFactory Pro
www.fineprint.cn










Скачать PDF:

[ 75N08.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
75N05N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
75N05 SUB75N05Vishay
Vishay
75N06N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
75N08N-CHANNEL MOSFETCHONGQING PINGYANG
CHONGQING PINGYANG

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск