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PDF TG2520SBN Data sheet ( Hoja de datos )
| Número de pieza | TG2520SBN | |
| Descripción | TCXO/VC-TCXO | |
| Fabricantes | Seiko | |
| Logotipo |  |
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Crystal oscillator
TCXO/VC-TCXO
HIGH STABILITY
TG2016SBN / TG2520SBN
Product Number (Please contact us)
TG2016SBN : X1G004691xxxx00
TG2520SBN : X1G005151xxxx00
•Output frequency : 13 MHz to 52MHz
•Supply voltage : 1.8 V Typ./ 2.8 V Typ./ 3.0 V Typ./ 3.3 V Typ.
•Frequency / temperature characteristics
: ±0.5 × 10-6 Max. or ±2.0 × 10-6 Max.
•External dimensions: 2.0 × 1.6 × 0.73 mm / 2.5 × 2.0 × 0.8 mm
•Applications
: GPS, RF
Wireless communication devices
(CDMA, WCDMA, LTE, WiMAX, other)
•Features
: High stability, Low noise
TG2016SBN
TG2520SBN
(2.0 × 1.6 × 0.73 mm) (2.5 × 2.0 × 0.8 mm)
Actual size
TG2016SBN
TG2520SBN
Specifications (characteristics)
Item
Symbol
Output frequency range
f0
Supply voltage
Storage temperature
Operating temperature
Frequency tolerance
VCC
T_stg
T_use
f_tol
Frequency/temperature
characteristics
f0-TC
Frequency/load coefficient
Frequency/voltage coefficient
Frequency aging
f0-Load
f0-VCC
f_age
Current consumption
Input resistance
ICC
Rin
VC-TCXO
TCXO
13 MHz to 52MHz
13 MHz, 16.367667 MHz, 16.368 MHz, 16.369 MHz,
16.8 MHz, 19.2 MHz, 26 MHz, 27MHz, 30 MHz,
32 MHz, 33.6MHz, 38.4 MHz, 40 MHz and 52 MHz
1.8 V ±0.1 V / 2.8 V ±5 % / 3.0 V ±5 % / 3.3 V ±5 %
-40 °C to +90 °C
G: -40 °C to +85 °C / N: -30 °C to +85 °C
±2.0 × 10-6 Max.
C: ±0.5 × 10-6 Max. / N: -30 °C to +85 °C
F: ±2.0 × 10-6 Max. / N: -30 °C to +85 °C
C: ±0.5 × 10-6 Max. / G: -40 °C to +85 °C
±0.2 × 10-6 Max.
±0.2 × 10-6 Max.
±1.0 × 10-6 Max.
±1.5 × 10-6 Max.
1.5 mA Max.
2.0 mA Max
500 kΩ Min.
-
Frequency control range
f_cont ±8.0 × 10-6 to ±15.0 × 10-6
-
Frequency change polarity
-
Positive polarity
Symmetry
SYM
40 % to 60 %
Output voltage
VPP
0.8 V Min.
Start-up time
t_str
2.0 ms Max.
Output load condition
Load_R
Load_C
10 kΩ
10 pF
* Note : Please contact us for requirements not listed in this specification.
-
Conditions / Remarks
Standard frequency
Supply voltage range :1.7 V to 3.63 V
Storage as single product.
After reflow, +25 °C
High stability version (for GPS)
Standard stability version (for RF)
Customized product(Option)
10 kΩ // 10 pF ±10 %
VCC ± 5 %
+25 °C, First year, 13 MHz≤ f0 ≤40 MHz
+25 °C ,First year, 40 MHz< f0 ≤52 MHz
13 MHz≤ f0 ≤26 MHz
26MHz<f0
VC - GND (DC)
VC =0.9 V ±0.6 V (VCC =1.8 V) or
VC =1.4 V ±1.0 V (VCC =2.8 V) or
VC =1.5 V ±1.0 V (VCC =3.0 V) or
VC =1.65 V ±1.0 V (VCC =3.3 V)
GND level (DC cut)
Peak to Peak
T=0 at 90% Vcc
DC cut capacitor = 0.01 µF
Product Name
TG2016 SBN 26.000000MHz T C N N N A
(Standard form)
Model(TG2016, TG2520) Output (S: Clipped sine wave) Frequency Supply voltage (T: 1.8 to 3.3 V)
Frequency / temperature characteristics (C: ±0.5 × 10-6 Max.) Operating temperature (N: -30 °C to +85 °C)
OE function (N: Non) VC function(A: VC-TCXO, N: Non) Internal identification code (“A” is default)
External dimensions
(Unit:mm)
Footprint (Recommended)
(Unit:mm)
TG2016SBN
2.0±0.15
TG2520SBN
2.5±0.2
B
Marking
Marking
#1
C0.15
1.58±0.1
#2
Pin map
Pin
1
2
3
4
#4
1.2±0.1
#3
Connection
VC-TCXO
TCXO
VC N.C.
GND
OUT
VCC
0.5±0.1
#1 #2
C0.20
#4
(0.55) 1.5±0.1
#3
Size
A
B
C
D
D
TG2016SBN
(2.0x1.6mm)
0.75
0.6
1.13
1.65
TG2520SBN
(2.5x2.0mm)
1.0
0.8
1.4
2.1
To maintain stable operation, provide a 0.01uF to
0.1uF by-pass capacitor at a location as near as
possible to the power source terminal of the crystal
product (between VCC - GND).
1 page | ||
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| PDF Descargar | [ Datasheet TG2520SBN.PDF ] | |
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