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BU1010-E3 PDF даташит

Спецификация BU1010-E3 изготовлена ​​​​«Vishay» и имеет функцию, называемую «Bridge Rectifiers».

Детали детали

Номер произв BU1010-E3
Описание Bridge Rectifiers
Производители Vishay
логотип Vishay логотип 

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BU1010-E3 Даташит, Описание, Даташиты
www.vishay.com
BU1006-E3, BU1008-E3, BU1010-E3
Vishay General Semiconductor
Enhanced isoCink+™ Bridge Rectifiers
isoCink+™
+ ~~ -
Case Style BU
- ~~+
+~~ -
* Tested to UL standard for safety electrically isolated
semiconductor devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
PRIMARY CHARACTERISTICS
Package
BU
IF(AV)
VRRM
IFSM
IR
VF at IF = 5.0 A
TJ max.
Diode variations
10 A
600 V, 800 V, 1000 V
120 A
5 µA
0.88 V
150 °C
In-Line
FEATURES
• UL recognition file number E309391 (QQQX2)
UL 1557 (see *)
• Thin single in-line package
• Available for BU-5S lead forming option
(part number with “5S” suffix, e.g. BU10065S)
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
MECHANICAL DATA
Case: BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
Rating for fusing (t < 8.3 ms) TJ = 25 °C
Operating junction and storage temperature range
TC = 92 °C (1)
TA = 25 °C (2)
VRRM
IO
IFSM
I2t
TJ, TSTG
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
BU1006
600
BU1008
800
10
3.2
120
60
- 55 to + 150
BU1010
1000
UNIT
V
A
A
A2s
°C
Revision: 16-Aug-13
1 Document Number: 84801
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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BU1010-E3 Даташит, Описание, Даташиты
www.vishay.com
BU1006-E3, BU1008-E3, BU1010-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous forward
voltage per diode (1)
Maximum reverse current per diode
Typical junction capacitance per diode
IF = 5.0 A
rated VR
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
VF
IR
CJ
0.98
0.88
-
64
43
MAX.
1.05
0.95
5.0
250
-
UNIT
V
μA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1006
Typical thermal resistance
RJC (1)
RJA (2)
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
BU1008
3.0
20
BU1010
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BU1006-E3/45
4.55
45
BU1006-E3/51
4.55
51
BU10065S-E3/45
4.55
45
BASE QUANTITY
20
250
20
DELIVERY MODE
Tube
Paper tray
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
12 4
10
8 With Heatsink
Sine-Wave, R-Load
TC Measured at Device Bottom
6
TC TC
4
2
0
0 20 40 60 80 100 120 140 160
Case Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
3
2
1 Without Heatsink
Sine-Wave, R-Load
Free Air, TA
0
0 25 50 75 100 125 150
Ambient Temperature (°C)
Fig. 2 - Forward Current Derating Curve
Revision: 16-Aug-13
2 Document Number: 84801
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

BU1010-E3 Даташит, Описание, Даташиты
www.vishay.com
BU1006-E3, BU1008-E3, BU1010-E3
Vishay General Semiconductor
24
20
16
12
8
4
0
0 1 2 3 4 5 6 7 8 9 10 11
Average Forward Current (A)
Fig. 3 - Forward Power Dissipation
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
0.1 TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
100
0.01
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 16-Aug-13
3 Document Number: 84801
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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