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PDF 1N80 Data sheet ( Hoja de datos )
| Número de pieza | 1N80 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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1N80
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
1A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N80 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costomers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 1N80 is universally applied in high efficiency switch mode
power supply.
Power MOSFET
1
TO-220
1
TO-220F
1
TO-220F1
FEATURES
* RDS(on)=13.5Ω @VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
1N80L-TA3-T
1N80G-TA3-T
1N80L-TF3-T
1N80G-TF3-T
1N80L-TF1-T
1N80G-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
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1 page  
1N80
Preliminary
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
3mA
12V
200nF
50kΩ
VGS
300nF
Same Type
as DUT
DUT
Gate Charge Test Circuit
VGS
10V
VDS
QGS
QG
QGD
Charge
Gate Charge Waveforms
Resistive Switching Test Circuit
10V
tP
VDS
RG ID
L
DUT
VDD
Unclamped Inductive Switching Test Circuit
Resistive Switching Waveforms
BVDSS
IAS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDS(t)
tP Time
Unclamped Inductive Switching Waveforms
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
5 of 6
QW-R502-491.b
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 1N80.PDF ] | |
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