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Número de pieza | 2SK1584 | |
Descripción | MOS Field Effect Transistor | |
Fabricantes | Kexin | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1584 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! SMD Type
MOS Field Effect Transistor
2SK1584
Features
Directly driven by Ics having a 5V P
Has low on-state resistance
RDS(on)=2.0 MAX.@VGS=4.0V,ID=0.3A
RDS(on)=1.5 MAX.@VGS=10V,ID=0.3A
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 3
0.48+0.1
-0.1
0.53+0.1
-0.1
MOSFET
Unit: mm
1.50+0.1
-0.1
0.44+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10ms, duty cycle 5%
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
30
20
0.5
1.0
2.0
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=30V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=10V,ID=0.1mA
Yfs VDS=5.0V,ID=0.5A
VGS=4.0V,ID=0.3A
RDS(on)
VGS=10V,ID=0.3A
Ciss
Coss VDS=5.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=0.3A,VGS(on)=4V,RL=33
,VDD=10V,RG=10
tf
Marking
Marking
NH
3.00+0.1
-0.1
Unit
V
V
A
A
W
1 Gate
11.. SBoauserce
222.. DDCroralalienicntor
333.. GSEmaotuieitrtcere
Min Typ Max Unit
10 A
10 A
1.3 1.85 2.5 V
350 440
ms
1.2 2.0
0.65 1.5
60 pF
50 pF
9 pF
80 ns
270 ns
100 ns
110 ns
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Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2SK1584.PDF ] |
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