7N40 PDF даташит
Спецификация 7N40 изготовлена «Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | 7N40 |
Описание | N-CHANNEL POWER MOSFET |
Производители | Unisonic Technologies |
логотип |
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7N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
7A, 400V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 7N40 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 7N40 is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
1
TO-220
1
TO-220F1
FEATURES
* High switching speed
* RDS(ON)=0.9Ω @ VGS=10V
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
7N40L-TA3-T
7N40G-TA3-T
7N40L-TF1-T
7N40G-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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7N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
400 V
±30 V
Drain Current
Continuous (TC=25°C)
Pulsed (Note 2)
Avalanche Current (Note 2)
ID
IDM
IAR
7A
28 A
7.0 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
EAS
EAR
dv/dt
360 mJ
9.8 mJ
4.5 V/ns
Power Dissipation
Derate above 25°C
TO-220
TO-220F1
TO-220
TO-220F1
PD
98
39
0.78
0.315
W
W
W/°C
W/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 13mH, IAS = 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
1.28
3.2
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS VDS=400V, VGS=0V
Gate- Source Leakage Current
Forward
Reverse
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, VDS=320V, ID=7A
(Note 1, 2)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=200V, ID=7A, RG=25Ω
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS
ISM
Drain-Source Diode Forward Voltage
VSD IS=7A, VGS=0V
Body Diode Reverse Recovery Time
trr IS=7A, VGS=0V,
Body Diode Reverse Recovery Charge
QRR dIF/dt=100A/µs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
400 V
0.43 V/°C
1 µA
+100 nA
-100 nA
2.0 4.0 V
0.75 0.9 Ω
600 780 pF
105 135 pF
13 17 pF
16.5 22 nC
4.5 nC
8.5 nC
20 50 ns
75 160 ns
35 80 ns
50 110 ns
7A
28 A
1.5 V
220 ns
1.3 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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