PDF 4N35 Data sheet ( Hoja de datos )

Número de pieza	4N35
Descripción	Phototransistor Optocoupler General Purpose Type
Fabricantes	Avago
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No Preview Available ! 4N35 Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description The 4N35 is an optocoupler for general purpose applica- tions. It contains a light emitting diode optically coupled to a photo-transistor. It is packaged in a 6-pin DIP pack- age and available in wide-lead spacing option and lead bend SMD option. Response time, tr, is typically 3 µs and minimum CTR is 100% at input current of 10 mA. Applications • I/O interfaces for computers • System appliances, measuring instruments • Signal transmission between circuits of different potentials and impedances Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 54 1 23 1. ANODE 2. CATHODE 3. NC 4. EMITTER 5. COLLECTOR 6. BASE Features • High Current Transfer Ratio (CTR: min. 100% at IF = 10 mA, VCE = 10 V) • Response time (tr: typ., 3 µs at VCE = 10 V, IC = 2 mA, RL = 100 Ω) • Input-output isolation voltage (Viso = 3550 Vrms) • Dual-in-line package • UL approved • CSA approved • IEC/EN/DIN EN 60747-5-2 approved • Options available: – Leads with 0.4" (10.16 mm) spacing (W00) – Leads bends for surface mounting (300) – Tape and reel for SMD (500) – IEC/EN/DIN EN 60747-5-2 approvals (060) Schematic ANODE 1 + VF IF – CATHODE 2 6 BASE IC 5 COLLECTOR 4 EMITTER CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. 1 page Electrical Specifications (TA = 25˚C) Parameter Symbol Min. Typ. Max. Units Forward Voltage VF – 1.2 1.5 V Reverse Current IR – – 10 µA Terminal Capacitance Ct – 50 – pF Collector Dark Current ICEO – – 50 nA – – 500 µA Collector-Emitter Breakdown Voltage BVCEO 30 – V Emitter-Collector Breakdown Voltage BVECO 7 – – V Collector-Base Breakdown Voltage BVCBO 70 – – V Collector Current IC 10 – – mA Current Transfer Ratio CTR 100 – – % Collector-Emitter Saturation Voltage VCE(sat) – – 0.3 V Response Time (Rise) tr – 3 10 µs Response Time (Fall) tf – 3 10 µs Isolation Resistance Riso 5 x 1010 1 x 1011 – Ω Floating Capacitance Cf – 1 2.5 pF CTR = IICFx 100% Test Conditions IF = 10 mA VR = 4 V V = 0, f = 1 KHz VCE = 10 V, IF = 0, TA = 25˚C VCE = 30 V, IF = 0, TA = 100˚C IC = 0.1 mA, IF = 0 IE = 10 µA, IF = 0 IC = 0.1 mA, IF = 0 IF = 10 mA VCE = 10 V IF = 50 mA, IC = 2 mA VCC = 10 V, IC = 2 mA RL = 100 Ω DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz 100 80 60 40 20 0 -55 -25 0 25 50 75 100 125 TA – AMBIENT TEMPERATURE – °C 400 300 200 100 0 -55 -25 0 25 50 75 100 125 TA – AMBIENT TEMPERATURE – °C 500 TA = 75°C 200 TA = 50°C 100 TA = 25°C 50 TA = 0°C TA = -25°C 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 VF – FORWARD VOLTAGE – V Figure 1. Forward current vs. temperature. 4N35 fig 1 Figure 2. Collector power dissipation vs. temperature. 4N35 fig 2 Figure 3. Forward current vs. forward voltage. 4N35 fig 3 5 Page

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