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PDF QID3320004 Data sheet ( Hoja de datos )

Número de pieza QID3320004
Descripción Dual IGBT HVIGBT Module
Fabricantes Powerex 
Logotipo Powerex Logotipo



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No Preview Available ! QID3320004 Hoja de datos, Descripción, Manual

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3320004
Dual IGBT
HVIGBT Module
200 Amperes/3300 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
M
1
G (3TYP)
T
(SCREWING
DEPTH - 3 TYP)
23
H
H
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
42
8
7
1
5
63
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.51 140.0
B 2.87
73.0
C 1.50
38.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01
57.0±0.25
F 1.18
30.0
G 0.43
11.0
H 1.07
27.15
J 0.20
5.0
K 1.65
42.0
Dimensions
L
M
N
P
Q
R
S
T
U
V
Inches
0.69±0.01
0.38
0.20
0.22
1.04
0.16
M5 Metric
0.63 Min.
0.11 x 0.02
0.28 Dia.
Millimeters
17.5±0.25
9.75
5.0
5.5
26.5
4.0
M5
16.0 Min.
2.8 x 0.5
7.0 Dia.
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended 
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
UL Recognized (E78240)
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 6
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1

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QID3320004 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
CAPACITANCE VS.
(TYPICAL)
VCE
100
Cies
10
1.0
VGE = 0V
Tj = 25°C
f = 100 kHz
Coes
Cres
0.1
10-1 100 101 102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1000
900
800
700
600
500
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
VCC = 1800V
VGE = ±15V
RG(on) = 15Ω
RG(off) = 50Ω
Ls = 100nH
Tj = 125°C
Inductive Load
Eon
Eoff
400
300 Erec
200
100
0
0 50 100 150 200 250 300 350
COLLECTOR CURRENT, IC, (AMPERES)
GATE CHARGE VS. VGE
20
VCE = 1800V
15 IC = 170A
Tj = 25°C
10
5
0
-5
-10
-15
0
0.5 1.0 1.5
GATE CHARGE, QG, (μC)
2.0
1100
1000
900
800
700
600
500
400
300
200
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
VCC = 1800V
VGE = ±15V
RG(on) = 15Ω
RG(off) = 50Ω
Ls = 100nH
Tj = 150°C
Inductive Load
Eon
Eoff
Erec
100
0
0
50 100 150 200 250 300 350
COLLECTOR CURRENT, IC, (AMPERES)
11/14 Rev. 6
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5

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