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QID1230015 PDF даташит

Спецификация QID1230015 изготовлена ​​​​«Powerex» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв QID1230015
Описание IGBT Module
Производители Powerex
логотип Powerex логотип 

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QID1230015 Даташит, Описание, Даташиты
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID1230015
Dual IGBTMOD™
NX-Series Module
300 Amperes/1200 Volts
A
D
E
JF
G
H
Q
ST U
R
ST
QU
W
VX
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47 24
48 23
DETAIL "B"
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
M LK
N
DETAIL "A"
KP L
AK
JY
(4 PLACES)
AD
AE
AF
AA B
Z AB
AG
AC (4 PLACES)
AJ
AH
AL
AMC
AT
AU
AV
E1C2(24) E1C2(23)
AW
AX
Tr2
G2(38)
E2(39)
Di2 Di1 Tr1
C1(22)
E1(16)
G1(15)
DETAIL "B"
E2 C1
(47) (48)
Th
NTC
TH1 TH2
(1) (2)
AP
AR
AS
AN AQ
DETAIL "A"
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Inches
5.98
2.44
0.67
5.39
4.79
4.33±0.02
3.89
3.72
0.53
0.15
0.28
0.30
1.95
0.9
0.55
0.87
0.67
0.48
0.24
0.16
0.37
0.83
M6
Millimeters
152.0
62.0
17.0
137.0
121.7
110.0±0.5
99.0
94.5
13.5
3.8
7.25
7.75
49.54
22.86
14.0
22.0
17.0
12.0
6.0
4.2
6.5
21.14
M6
Dimensions
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53 39.0
1.97±0.02 50.0±0.5
2.26 57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.02 17.0+1.0/-0.5
0.51 13.0
0.27 7.0
0.03 0.8
0.81 20.5
0.12 3.0
0.14 3.5
0.21 5.4
0.49 12.5
0.15 3.81
0.05 1.15
0.025
0.65
0.29 7.4
0.24 6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06 1.5
0.49 12.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ AlSiC Baseplate
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
04/10 Rev. 0
1









No Preview Available !

QID1230015 Даташит, Описание, Даташиты
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M6 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
Tj
Tstg
VISO
Inverter Sector
Collector-Emitter Voltage (G-E Short)
VCES
Gate-Emitter Voltage (C-E Short)
VGES
Collector Current (TC = 90°C)*
IC
Peak Collector Current**
ICM
Emitter Current (TC = 25°C, Tj < 150°C)*
IE***
Peak Emitter Current (Tj < 150°C)**
IEM***
Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)*
PC
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
QID1230015
-40 to 150
-55 to 130
31
40
220
2500
1200
±20
300
600
300
600
1580
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
IGBT FWDi NTC Thermistor
0
17.3
26.5
30.8
40.0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47 24
Th
48
23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
17.3
30.8
37.4
Units
°C
°C
in-lb
in-lb
Grams
Volts
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Dimensions in mm (Tolerance: ±1mm)
2 04/10 Rev. 0









No Preview Available !

QID1230015 Даташит, Описание, Даташиты
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Symbol
Test Conditions
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
ICES
VGE(th)
IGES
VCE(sat)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Turn-on Delay Time
Load
Turn-on Rise Time
Switch
Turn-off Delay Time
Time
Turn-off Fall Time
Reverse Recovery Time*
Reverse Recovery Charge*
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr
Qrr
VCE = VCES, VGE = 0V
IC = 30mA, VCE = 10V
VGE = VGES, VCE = 0V
IC = 300A, VGE = 15V, Tj = 25°C
IC = 300A, VGE = 15V, Tj = 125°C
IC = 300A, VGE = 15V, Chip
VCE = 10V, VGE = 0V
VCC = 600V, IC = 300A, VGE = 15V
VCC = 600V, IC = 300A,
VGE = ±15V,
RG = 1.0Ω, IE = 300A,
Inductive Load Switching Operation
Emitter-Collector Voltage*
VEC
IE = 300A, VGE = 0V
IE = 300A, VGE = 0V, Chip
Min.
6
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Module Lead Resistance
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
Rlead
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
RGint
RG
Main Termnals-Chip (Per Switch)
Per IGBT
Per FWDi
Thermal Grease Applied
TC = 25°C
TC = 125°C
Min.
2.1
4.2
1.0
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Zero Power Resistance
R TC = 25°C
Deviation of Resistance
R/R
TC = 100°C, R100 = 493Ω
B Constant
B(25/50) B(25/50) = In(R25 / R50) / (1/T25 – 1/T50)***
Power Dissipation
P25 TC = 25°C
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**TC, Tf measured point is just under the chips.
***R25: Resistance at Absolute Temperature T25(K), R50: Resistance at Absolute Temperature T50(K),
T25 = 25(°C) +273.15 = 298.15(K), T50 = 50(°C) + 273.15 = 323.15(K)
Min.
4.85
–7.3
Typ.
7
2.0
2.2
1.9
1350
8.0
2.6
2.5
Max.
1.0
8
0.5
2.6
47.0
4.0
0.9
550
180
600
600
250
3.4
Units
mA
Volts
µA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
Volts
Volts
Typ.
1.2
0.015
3.0
6.0
Max.
0.079
0.144
3.9
7.8
10
Units
mΩ
°C/W
°C/W
°C/W
Ω
Ω
Ω
Typ.
5.00
3375
Max.
5.15
+7.8
10
Units
kΩ
%
K
mW
04/10 Rev. 0
3










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