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Datasheet MRF555 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MRF555 | NPN SILICON RF LOW POWER TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF555/D
The RF Line
NPN Silicon RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the UHF frequency range.
• Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = |  Motorola Semiconductors | transistor |
| 2 | MRF555 | NPN SILICON RF TRANSISTOR MRF555
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range.
FEATURES:
• 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 % (Typ)
MAXIMUM RATINGS
IC 500 mA
VCBO
30 V
PDISS
3.0 W @ TC = 75 °C
TJ -65 °C |  Advanced Semiconductor | transistor |
| 3 | MRF555 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• Specified @ 12.5 V, 470 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro |  Microsemi | transistor |
| 4 | MRF555 | Trans GP BJT NPN 16V 0.5A 4-Pin Power Macro |  New Jersey Semiconductor | data |
MRF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MRF | Fast Acting Radial Lead Micro Fuse Series Type MRF
MRFD0106
EMRFD1005A1
RoHS Compliant
Fast Acting Radial Lead Micro Fuse Series
Catalog Number Ampere Rating Typical Volt-drop Melting I2T Cold @100% In < 10 mSec Resistance (ohm) (Volt) max. (A2 Sec) Melting I2T @10 In (A2 Sec) Maximum Power Dissipation (W)
MRF 50 MRF 63 MRF 80 MRF 100 MR  Bel Fuse data | | |
| 2 | MRF-261 | High Band VHF FM Power Transistor ELEFLOW
www.eleflow.com
TECHNOLOGIES
MRF261
High band/VHF FM power transistor
MRF261
Description: MRF261 is designed as 10W, 5.2dB, 12.5V, 136-175MHz, TO220 high band/VHF FM transistors. Maximum Ratings at TU = 25 Symbol BVCES BVCEO BVEBO IC Ptot TSTG TjM Data at TU = 25 Sy  Eleflow transistor | | |
| 3 | MRF10005 | The RF Line Microwave Power Transistor SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10005/D
The RF Line
Microwave Power Transistor
. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performanc  Tyco transistor | | |
| 4 | MRF10005 | MICROWAVE POWER TRANSISTOR MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF10005/D
Microwave Power Transistor
. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed P Motorola Semiconductors transistor | | |
| 5 | MRF1000MB | MICROWAVE POWER TRANSISTORS NPN SILICON SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1000MB/D
The RF Line
Microwave Pulse Power Transistors
Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, Tyco transistor | | |
| 6 | MRF1001A | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF1001A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
G
U max
2
= 11.5 dB (typ) @ 300 MHz, Microsemi transistor | | |
| 7 | MRF1002 | MICROWAVE POWER TRANSISTOR MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1002MA/D
Microwave Pulse Power Transistors
. . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Motorola Semiconductors transistor | |
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