1N4448W PDF даташит
Спецификация 1N4448W изготовлена «SeCoS» и имеет функцию, называемую «Surface Mount Fast Switching Diode». |
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Детали детали
Номер произв | 1N4448W |
Описание | Surface Mount Fast Switching Diode |
Производители | SeCoS |
логотип |
2 Pages
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Elektronische Bauelemente
1N4448W
Surface Mount Fast Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
z Fast switching speed
z Ultra-Small surface mount package
z For general purpose switching applications
z High conductance
z Also available in lead-free version
MECHANICAL DATA
z Case: SOD-123, Plastic
z Epoxy: UL 94V-0 rate flame retardant
z Metallurgically bonded construction
z Polarity: Color band denotes cathode end
z Mounting position: Any
z Weight: 0.0094 grams
MARKING
T5
D
H
SOD-123
Cathode Band
G
1
2
F
C BA
E
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.05 1.25
0.10 REF.
1.05 1.15
0.45 0.65
0.08 0.15
J
REF.
F
G
H
J
Millimeter
Min. Max.
1.50 1.70
2.60 2.80
3.55 3.85
0.50 REF.
ABSOLUTE MAXIMUM RATINGS
(at Ta = 25°C unless otherwise specified, single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Parameter
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
100
75
53
500
250
V
V
V
mA
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
IFSM
4.0
2.0
A
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature, Storage Temperature
PD
RθJA
TJ, TSTG
400
315
-65 ~ 150
mW
℃/W
℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Forward Voltage (Note 2)
Peak Reverse Current (Note 2)
Total Capacitance
Symbol
VRM
VFM
IRM
CT
Min.
75
-
-
-
Max.
-
0.715
0.855
1.0
1.25
2.5
50
30
25
4.0
Unit
V
V
µA
µA
µA
nA
pF
Reverse Recovery Time
tRR - 4.0
NOTES: 1. Part mounted on FR-4 PC board with recommended pad layout
2. Short duration test pulse used to minimize self-heating effect.
nS
Test Conditions
IR = 1.0µA
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 75V
VR = 75V, TJ = 150 °C
VR = 25V, TJ = 150 °C
VR = 20V
VR = 0, f = 1.0 MHz
IF = IR = 10mA,
Irr = 0.1x IR, RL = 100 Ω
01-Jun-2004 Rev. B
Page 1 of 2
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Elektronische Bauelemente
1N4448W
Surface Mount Fast Switching Diode
RATINGS AND CHARACTERISTIC CURVES (1N4448W)
300 1000
100
200
10
100
0
0
10,000
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
1.0
0.1
0.01
0
1
2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
1000
100
10
VR = 20V
1
0 100 200
Tj , JUNCTION TEMPERATURE (°C)
Fig. 3 Leakage Current vs Junction Temperature
01-Jun-2004 Rev. B
Page 2 of 2
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