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CHM6338JPT PDF даташит

Спецификация CHM6338JPT изготовлена ​​​​«Chenmko Enterprise» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CHM6338JPT
Описание Dual N-Channel Enhancement Mode Field Effect Transistor
Производители Chenmko Enterprise
логотип Chenmko Enterprise логотип 

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CHM6338JPT Даташит, Описание, Даташиты
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHM6338JPT
Dual N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts CURRENT 5.2 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small flat package. (SO-8 )
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
* High saturation current capability.
CONSTRUCTION
* N-Channel Enhancement
CIRCUIT
8D1 D1 D2 D25
SO-8
4.06 (0.160)
3.70 (0.146)
5.00 (0.197)
4.69 (0.185)
1
4
8
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
6.20 (0.244)
5.80 (0.228)
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
.25 (0.010)
.17 (0.007)
1S1 G1 S2 G24
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
PD Maximum Power Dissipation
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
Dimensions in millimeters
CHM6338JPT
60
±20
5.2
20
2000
-55 to 150
-55 to 150
62.5
SO-8
Units
V
V
A
mW
°C
°C
°C/W
2005-02









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CHM6338JPT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHM6338JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
60 V
1 µA
+100
-100
nA
nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
g FS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS=10V, ID=5.2A
VGS=4.5V, ID=4.7A
VDS =15V, ID = 5.2A
1 3V
33 41
m
41 55
10 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 30V, VGS = 0V,
f = 1.0 MHz
745
100 pF
60
SWITCHING CHARACTERISTICS (Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
ton Turn-On Time
tr Rise Time
toff Turn-Off Time
tf Fall Time
VDS=30V, ID=5.2A
VGS=10V
VDD= 30V
ID = 4.4A, VGS= 10 V
RGEN= 1
22.2 29.5
3.2
4.7
14 28
5 10
36 72
6 12
nC
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward Voltage IS = 2.0A, VGS= 0 V (Note 2)
5.2 A
1.2 V










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Номер в каталогеОписаниеПроизводители
CHM6338JPTDual N-Channel Enhancement Mode Field Effect TransistorChenmko Enterprise
Chenmko Enterprise

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