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KTB1241 PDF даташит

Спецификация KTB1241 изготовлена ​​​​«KEC» и имеет функцию, называемую «EPITAXIAL PLANAR PNP TRANSISTOR».

Детали детали

Номер произв KTB1241
Описание EPITAXIAL PLANAR PNP TRANSISTOR
Производители KEC
логотип KEC логотип 

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KTB1241 Даташит, Описание, Даташиты
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURE
High Breakdown Voltage and High Current
: VCEO=-80V, IC=-1A.
Low VCE(sat)
Complementary to KTD1863.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
RATING
-80
-80
-5
-1
1
1
150
-55150
UNIT
V
V
V
A
A
W
KTB1241
EPITAXIAL PLANAR PNP TRANSISTOR
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
NN
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
fT
VCB=-60V, IE=0
VEB=-4V, IC=0
IC=-1mA, IB=0
VCE=-3V, IC=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-50mA, f=30MHz
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification O:70140, Y:120240, GR:200400
MIN.
-
-
-80
70
-
-
-
TYP.
-
-
-
-
-
100
25
MAX.
-1
-1
-
400
-0.4
-
-
UNIT
A
A
V
V
MHz
pF
1998. 8. 21
Revision No : 1
1/2









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KTB1241 Даташит, Описание, Даташиты
KTB1241
-1000
-100
I C - VBE
Ta=25 C
VCE =-5V
-10
-1
-0.1
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE-EMITTER VOLTAGE VBE (V)
hFE - I C
1000
500
200
100 VCE =-3V
50
VCE =-1V
20
10
-1 -2 -5 -10 -20 -50-100 -200-500-1000-2000
COLLECTOR CURRENT I C (mA)
fT - IE
1000
500
200
100
50
Ta=25 C
VCE =-5V
20
10
5
2
1
12
5 10 20 50 100 200 500 1000
EMITTER CURRENT I C (mA)
SAFE OPERATION AREA
-10
-5
-2 I C Max. (Pulse)
-1 DC
-500m
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
*Printed circuit board:
1.7mm thick with collecor
copper plating at least 1cm2
-0.1 -0.2 -0.5 -1 -2
Ta=25 C
*Single nonrepetitive
pulse
Pw=100mPws =10ms
-5 -10 -20 -50 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
1998. 8. 21
Revision No : 1
I C - VCE
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
Ta=25 C
-0.45mA
-0.4mA
-0.35mA
-0.3mA
-0.25mA
-0.2mA
-0.15mA
-0.1mA
-0.05mA
I B=0mA
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.03
V CE(sat) - I C
Ta=25 C
IC/I B=20
IC /I B=10
-0.01
-1 -2
-5 -10 -20 -50 -100 -200 -500-1000 -2000
COLLECTOR CURRENT I C (mA)
Cob - VCB
1000
500
200
100
50
Ta=25 C
f=1MHz
IE =0A
20
10
5
2
1
-0.1 -0.2
-0.5 -1
-2
-5 -10 -20 -50 -100
COLLECTOR-BASE VOLTAGE VCB (V)
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Номер в каталогеОписаниеПроизводители
KTB1241EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)KEC(Korea Electronics)
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KTB1241EPITAXIAL PLANAR PNP TRANSISTORKEC
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