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1MBI1200U4C-170 PDF даташит

Спецификация 1MBI1200U4C-170 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT MODULE».

Детали детали

Номер произв 1MBI1200U4C-170
Описание IGBT MODULE
Производители Fuji Electric
логотип Fuji Electric логотип 

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1MBI1200U4C-170 Даташит, Описание, Даташиты
1MBI1200U4C-170
IGBT MODULE (U series)
1700V / 1200A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1700
±20
1600
1200
3200
2400
1200
2400
7350
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
A
W
°C
°C
VAC
N·m
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Symbols
Conditions
ICES VGE = 0V, VCE = 1700V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1200mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
VGE = 0V, VCE = 10V, f = 1MHz
ton
tr
toff
VCC = 900V, IC = 1200A
VGE = ±15V, Tj = 125°C
Rgon = 3.9Ω, Rgoff = 1.5Ω
tf
VF
(main terminal) VGE = 0V
VF IF = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
trr IF = 1200A
R lead
Characteristics
min. typ. max.
- - 1.0
- - 2400
5.5 6.5 7.5
- 2.43 2.61
- 2.83 -
- 2.25 2.40
- 2.65 -
- 112 -
- 1.80 -
- 0.85 -
- 1.30 -
- 0.35 -
- 1.98 2.36
- 2.18 -
- 1.80 2.15
- 2.00 -
- 0.35 -
- 0.146 -
Units
mA
nA
V
V
nF
µs
V
µs
mΩ
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min. typ. max.
- - 0.017
- - 0.030
- 0.006 -
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1









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1MBI1200U4C-170 Даташит, Описание, Даташиты
1MBI1200U4C-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
2800
Tj=25°C ,chip
2400
VGE=20V 15V 12V
2000
1600
10V
1200
800
400
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
2800
2400
Tj=25°C Tj=125°C
2000
1600
1200
800
400
0
012345
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
10 Cres
Coes
1
0 10 20 30
Collector-Emitter voltage : VCE [V]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
2800
Tj= 125°C, chip
2400
VGE=20V15V
12V
2000
1600
1200
10V
800
400 8V
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
10
8
6
4
Ic=2400A
2 Ic=1200A
Ic=600A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
1000
800
600
400
200
0
0
Dynamic Gate charge (typ.)
Tj= 25°C
VCE
VGE
25
20
15
10
5
1000 2000 3000 4000
Gate charge : Qg [ nC ]
0
5000
2









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1MBI1200U4C-170 Даташит, Описание, Даташиты
1MBI1200U4C-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj= 125°C
2.4
2.2 ton
2.0
1.8
1.6
1.4
1.2
toff
tr
1.0
0.8
0.6
0.4 tf
0.2
0.0
0
400
800
1200
1600
2000
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj= 125°C
800
700 Eoff
600 Eon
500 Err
400
300
200
100
0
0
400
800
1200
1600
2000
Collector current : Ic [ A ] , Forward current : IF [ A ]
2800
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
2400
2000
1600
1200
800
400
0
0
400
800
1200
1600
2000
Collector - Emitter voltage : VCE [ V ]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A,VGE=±15V, Tj=125°C
6.0
ton
5.0
4.0 toff
3.0 tr
2.0
1.0
tf
0.0
0 2 4 6 8 10 12 14 16 18
Gate resistance : Rg [ Ω ]
1400
1200
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A,VGE=±15V, Tj=125°C
Eon
1000
800
Eoff
600
400
Err
200
0
0 2 4 6 8 10 12 14 16 18
Gate resistance : Rg [ Ω ]
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Номер в каталогеОписаниеПроизводители
1MBI1200U4C-170IGBT MODULEFuji Electric
Fuji Electric
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