1MBH20D-060 PDF даташит
Спецификация 1MBH20D-060 изготовлена «Fuji Electric» и имеет функцию, называемую «Molded IGBT». |
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Детали детали
Номер произв | 1MBH20D-060 |
Описание | Molded IGBT |
Производители | Fuji Electric |
логотип |
5 Pages
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1MBH20D-060
600V / 20A Molded Package
Features
・Small molded package
・Low power loss
・Soft switching with low switching surge and noise
・High reliability, high ruggedness (RBSOA, SCSOA etc.)
・Comprehensive line-up
Applications
・Inverter for Motor drive
・AC and DC Servo drive amplifier
・Uninterruptible power supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (Tc=25°C)
Items
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1ms
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Temperature
Storage Temperature
Mounting Screw Torque
TC=25℃
TC=110℃
TC=25℃
Symbols
VCES
VGES
Ic25
Ic110
Icp
Pc
Pc
Tj
Tstg
-
Ratings
600
±20
45
20
152
170
95
+150
-40 to +150
70
Units
V
V
A
A
A
W
W
℃
℃
N・cm
Electrical Characteristics (at Tc=25°C unless otherwise specified)
Items
Zero gate voltage Collector Current
Gate-Emitter leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Switching Time
Turn-off time
Turn-on time
Turn-off time
FWD forward voltage drop
Reverse recovery time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
ton
tr
toff
tf
VF
trr
Characteristics
min. typ. max.
- - 1.0
- - 20
5.5 - 8.5
- - 3.0
- 1300 -
- 300 -
- 70 -
- - 1.2
- - 0.6
- - 1.0
- - 0.35
- 0.16 -
- 0.11 -
- 0.30 -
- - 0.35
- - 3.0
- - 0.3
Conditions
VGE = 0V, VCE = 600V
VCE = 0V, VGE = ±20V
VCE = 20V, Ic = 20mA
VGE = 15V, Ic = 20A
VGE = 0V
VCE = 10V
f = 1MHz
Vcc = 300V
Ic = 20A
VGE = ±15V
RG = 120Ω
(Half Bridge)
Vcc = 300V
Ic = 20A
VGE = +15V
RG = 12Ω
(Half Bridge)
IF = 20A
IF = 20A, VGE = -10V
VR = 200V
di/dt = 100A/μs
Units
mA
μA
V
V
pF
μs
V
μs
Thermal resistance Characteristics
Items
Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Characteristics
min. typ. max.
- - 0.73
- - 1.31
Conditions
IGBT
FWD
Units
℃/W
1
Molded IGBT
Outline drawings, mm
Equivalent circuit
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1MBH20D-060
Characteristics
Collector current vs. Collector-Emitter voltage
Tj = 25℃
Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj = 125℃
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter Voltage
Tj = 25℃
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter Voltage
Tj = 125℃
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=300V, RG=12Ω, VGE=±15V, Tj=25℃
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=300V, RG=12Ω, VGE=±15V, Tj=125℃
Collector current : Ic [A]
http://s2tore.iiic.cc/
Collector current : Ic [A]
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1MBH20D-060
Characteristics
Switching time vs. RG
Vcc=300V, IC=20A, VGE=±15V, Tj=25℃
Molded IGBT
Switching time vs. RG
Vcc=300V, IC=20A, VGE=±15V, Tj=125℃
Gate resistance : RG [Ω]
Dynamic input characteristics
Tj=25℃
Gate resistance : RG [Ω]
Capacitance vs. Collector-Emitter voltage
Tj=25℃
Gate charge : Qg [nQ]
Reverse Biased Safe Operating Area
+VGE=15V, -VGE≦15V, Tj=125℃, RG≧12Ω
Collector-Emitter voltage : VCE [V]
Typical short circuit capability
Vcc=400V, RG=12Ω, Tj=125℃
Collector-Emitter voltage : VCE [V]
http://store3.iiic.cc/
Gate voltage : VGE [V]
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Номер в каталоге | Описание | Производители |
1MBH20D-060 | Molded IGBT | Fuji Electric |
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