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PDF MTN9N50BFP Data sheet ( Hoja de datos )
| Número de pieza | MTN9N50BFP | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C074FP
Issued Date : 2015.12.04
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTN9N50BFP
BVDSS
ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
RDS(ON)@VGS=10V, ID=4.5A
500V
8.5A
5.4A
0.63Ω(typ)
Description
The MTN9N50BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Ballast
• Inverter
Ordering Information
Device
MTN9N50BFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN9N50BFP
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C074FP
Issued Date : 2015.12.04
Revised Date :
Page No. : 5/ 9
Typical Characteristics(cont.)
Capacitance vs Reverse Voltage
10000
Brekdown Voltage vs Ambient Temperature
1.4
Ciss
1000
Coss
100
f=1MHz
Crss
10
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
10μs
100μs
1ms
1 10ms
100ms
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=3.25°C/W
Single pulse
DC
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
9
8
7
6
5
4
3
2
VGS=10V, RθJC=3.25°C/W
1
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
1.2
1.0
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
10
VDS=100V
8 VDS=250V
6
4 VDS=400V
2
0
0
1.4
ID=8A
5 10 15 20 25
Qg, Total Gate Charge(nC)
30
Threshold Voltage vs Junction Tempearture
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN9N50BFP
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTN9N50BFP.PDF ] | |
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