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MTN3N65BFP PDF даташит

Спецификация MTN3N65BFP изготовлена ​​​​«CYStech» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв MTN3N65BFP
Описание N-Channel Enhancement Mode Power MOSFET
Производители CYStech
логотип CYStech логотип 

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MTN3N65BFP Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C110FP
Issued Date : 2015.07.29
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN3N65BFP BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=1.5A
650V
3A
2.5Ω
Description
The MTN3N65BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
Applications
Adapter
Switching Mode Power Supply
Ordering Information
Device
MTN3N65BFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN3N65BFP
CYStek Product Specification









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MTN3N65BFP Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C110FP
Issued Date : 2015.07.29
Revised Date :
Page No. : 2/ 10
Symbol
MTN3N65BFP
Outline
TO-220FP
GGate
DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V,TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
dv/dt
TL
PD
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=3A, VDD=50V, L=5mH, RG=25Ω, starting TJ=+25.
3. ISD3A, dI/dt100A/μs, VDDBVDSS, starting TJ=+25.
Limits
650
±30
3*
1.9*
12*
24.5
3
3.3
4.5
300
33
0.26
-55~+150
Unit
V
A
mJ
A
mJ
V/ns
°C
W
W/°C
°C
MTN3N65BFP
CYStek Product Specification









No Preview Available !

MTN3N65BFP Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C110FP
Issued Date : 2015.07.29
Revised Date :
Page No. : 3/ 10
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
3.84
62.5
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
*GFS
IGSS
IDSS
650
-
2.0
-
-
-
-
*RDS(ON)
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
- - V VGS=0V, ID=250μA, Tj=25
0.63 - V/°C Reference to 25°C, ID=250μA
- 4.0 V VDS = VGS, ID=250μA
3.4 -
S VDS =15V, ID=1.5A
-
±100
nA VGS=±30V
-
-
1
10
μA
VDS =600V, VGS =0V
VDS =520V, VGS =0V, Tj=125°C
2.5 3.3 Ω VGS =10V, ID=1.5A
14.9 -
2.9 -
6.7 -
8.6 -
39.4 -
16.6 -
51.8 -
423 -
46 -
28 -
nC ID=3A, VDS=480V, VGS=10V
ns
VDS=300V, ID=3A, VGS=10V,
RG=25Ω
pF VGS=0V, VDS=25V, f=1MHz
-3
- 12
0.84 1.5
291 -
960 -
A
V IS=3A, VGS=0V
ns
nC
VGS=0V, IF=3A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTN3N65BFP
CYStek Product Specification










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Номер в каталогеОписаниеПроизводители
MTN3N65BFPN-Channel Enhancement Mode Power MOSFETCYStech
CYStech

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