MTN2310V8 PDF даташит
Спецификация MTN2310V8 изготовлена «CYStech» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | MTN2310V8 |
Описание | N-Channel Enhancement Mode Power MOSFET |
Производители | CYStech |
логотип |
9 Pages
No Preview Available ! |
CYStech Electronics Corp.
Spec. No. : C393V8
Issued Date : 2013.06.13
Revised Date : 2013.06.24
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTN2310V8
BVDSS
ID
RDSON(TYP)
VGS=10V, ID=3A
VGS=4.5V, ID=2A
60V
14A
31mΩ
35mΩ
Description
The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTN2310V8
Outline
Pin 1
DFN3×3
G:Gate D:Drain S:Source
Ordering Information
Device
MTN2310V8-0-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTN2310V8
CYStek Product Specification
No Preview Available ! |
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
TC=25℃
TA=25℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Spec. No. : C393V8
Issued Date : 2013.06.13
Revised Date : 2013.06.24
Page No. : 2/9
Limits
60
±20
14
9
6
4.8
30 *1
14
2.3 *2
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
9 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *2
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
1.4
9.5
-
-
-
31
35
1116
43
37
15
3.7
3.3
-
2.5
-
±100
1
25
45
50
-
-
-
-
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =5V, ID=3A
nA VGS=±20V
μA
VDS =48V, VGS =0
VDS =48V, VGS =0, Tj=125°C
mΩ
VGS =10V, ID=3A
VGS =4.5V, ID=2A
pF VDS=30V, VGS=0V, f=1MHz
nC VDS=30V, VGS=10V, ID=6A
MTN2310V8
CYStek Product Specification
No Preview Available ! |
CYStech Electronics Corp.
Spec. No. : C393V8
Issued Date : 2013.06.13
Revised Date : 2013.06.24
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
td(ON) *1, 2
- 12 -
tr *1, 2
td(OFF) *1, 2
-
-
18
37
-
-
ns VDS=30V, ID=1A, VGS=10V, RGS=6Ω
tf *1, 2
- 10 -
Source-Drain Diode
IS *1
- -6
ISM *3
- - 30
VSD *1
- 0.75 1.2
trr - 16 -
Qrr - 9 -
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
A
V
ns
nC
IS=2A, VGS=0V
IF=6A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTN2310V8
unit : mm
CYStek Product Specification
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MTN2310V8 | N-Channel Enhancement Mode Power MOSFET | CYStech |
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