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MTN12N60DFP PDF даташит

Спецификация MTN12N60DFP изготовлена ​​​​«CYStech» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв MTN12N60DFP
Описание N-Channel Enhancement Mode Power MOSFET
Производители CYStech
логотип CYStech логотип 

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MTN12N60DFP Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C076FP
Issued Date : 2016.02.04
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN12N60DFP
BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=6A
600V
12A
0.47Ω
Description
The MTN12N60DFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Applications
Ballast
Inverter
Ordering Information
Device
MTN12N60DFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN12N60DFP
CYStek Product Specification









No Preview Available !

MTN12N60DFP Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C076FP
Issued Date : 2016.02.04
Revised Date :
Page No. : 2/9
Symbol
Outline
MTN12N60DFP
TO-220FP
GGate DDrain SSource
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current @ VGS=10V
(Note 2)
Avalanche Current
(Note 2)
Single Pulse Avalanche Energy@L=1mH, IAS=12A, VDD=50V
(Note 3)
Repetitive Avalanche Energy
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor above 25
Operating Junction and Storage Temperature
* Drain current limited by maximum junction temperature.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
TL
PD
Tj, Tstg
Limits
600
±30
12*
7.4*
48*
12
72
6.3
300
62.5
0.5
-55~+150
Note : 1. TJ=+25to +150.
2. Pulse width limited by maximum junction temperature.
3. 100% tested by conditions of IAS=6A, VDD=50V, L=1mH, VGS=10V, starting TJ=+25.
Unit
V
A
mJ
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN12N60DFP
Symbol
Rth,j-c
Rth,j-a
Value
2.0
62.5
Unit
°C/W
CYStek Product Specification









No Preview Available !

MTN12N60DFP Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C076FP
Issued Date : 2016.02.04
Revised Date :
Page No. : 3/9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
*GFS
IGSS
IDSS
600
-
2.0
-
-
-
-
*RDS(ON)
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
-
0.7
-
15
-
-
-
0.47
41.3
10
11.4
22.2
10.4
141.4
24
1966
166
24
-
-
0.85
446
4.4
-
-
4.0
-
±100
1
25
0.65
62
-
-
45
21
283
48
2950
260
36
12
48
1.5
-
-
V
V/°C
V
S
nA
μA
Ω
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=6A
VGS=±30V
VDS =600V, VGS =0V
VDS =480V, VGS =0V, Tj=125°C
VGS =10V, ID=6A
nC ID=12A, VDD=480V, VGS=10V
ns
VDD=300V, ID=12A, VGS=10V,
RG=25Ω
pF VGS=0V, VDS=25V, f=1MHz
A
V IS=12A, VGS=0V
ns
μC
VGS=0V, IF=12A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTN12N60DFP
CYStek Product Specification










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MTN12N60DFPN-Channel Enhancement Mode Power MOSFETCYStech
CYStech

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