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MRF6522-10R1 PDF даташит

Спецификация MRF6522-10R1 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «RF Power FET».

Детали детали

Номер произв MRF6522-10R1
Описание RF Power FET
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

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MRF6522-10R1 Даташит, Описание, Даташиты
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF6522–10/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for Class A–AB common source, linear power amplifiers in the
960 MHz range. The MRF6522–10R1 has been specifically designed for use
in Communications Network (GSM) base stations. The package offers the
advantage of SMD.
Specified 26 Volts, 960 MHz, Class AB Characteristics
Output Power = 10 Watts CW
Power Gain = 15 dB Min @ 960 MHz, 10 Watts CW
Drain Efficiency = 48% Min @ 960 MHz, 10 Watts CW
D
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Bottom Side Source Eliminates DC Isolators,
Reducing Common Mode Inductances
In Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
G
S
MRF6522-10R1
960 MHz, 10 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 458C–03, STYLE 1
NI–200Z
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.2 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
(1) Thermal resistance is determined under specified RF operating condition.
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Min
65
Value
65
±20
29
0.17
–65 to +150
200
Max
4.0
Typ Max
——
— 1.0
— 1.0
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF6522–10R1
1
Archived 2005









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MRF6522-10R1 Даташит, Описание, Даташиты
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 50 µA)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 100 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 0.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 V, VGS = 0 V, f = 1.0 MHz)
Output Capacitance
(VDS = 26 V, VGS = 0 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 26 V, VGS = 0 V, f = 1.0 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common–Source Power Gain
(VDS = 26 V, Pout = 10 W CW, IDQ = 100 mA, f = 960 MHz)
Drain Efficiency
(VDS = 26 V, Pout = 10 W CW, IDQ = 100 mA, f = 960 MHz)
Input Return Loss
(VDS = 26 V, Pout = 10 W CW, IDQ = 100 mA, f = 960 MHz)
VGS(th)
1.25
3.0
4.0
Vdc
VGS(Q)
2.25
4.0
5.0
Vdc
VDS(on)
— 0.9 Vdc
Ciss
Coss
Crss
— 17 —
— 10 —
— 0.9 —
pF
pF
pF
Gps 15 17 — dB
η 48 50 — %
IRL — — –9 dB
MRF6522–10R1
2
MOTOROLA RF DEVICE DATA
Archived 2005









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MRF6522-10R1 Даташит, Описание, Даташиты
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS
21
20.5
20
19.5 IDQ = 200 mA
19
18.5 IDQ = 100 mA
18
17.5 IDQ = 50 mA
17 VDS = 26 Vdc
16.5 f = 960 MHz
16
0 2.0 4.0 6.0 8.0 10
Pout, OUTPUT POWER (WATTS) CW
Figure 1. Power Gain versus Output Power
12
12
10
8
6
4
VDS = 26 Vdc
2 IDQ = 100 mA
f = 960 MHz
0
0 0.05 0.1 0.15 0.2 0.25
Pin, INPUT POWER (WATTS) CW
Figure 2. Output Power versus Input Power
60
50
40
30
20
VDS = 26 Vdc
10 IDQ = 100 mA
f = 960 MHz
0
0 2.0 4.0 6.0 8.0 10 12
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Drain Efficiency versus
Output Power
-10
-20 3rd Order
-30
5th
-40
-50 7th
VDS = 26 Vdc
-60
IDQ = 100 mA
f1 = 959.9 MHz
f2 = 960.0 MHz
-70
0 2.0 4.0 6.0 8.0 10 12
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
MOTOROLA RF DEVICE DATA
MRF6522–10R1
3
Archived 2005










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