DataSheet26.com

TMU6N70G PDF даташит

Спецификация TMU6N70G изготовлена ​​​​«TRinno» и имеет функцию, называемую «N-channel MOSFET».

Детали детали

Номер произв TMU6N70G
Описание N-channel MOSFET
Производители TRinno
логотип TRinno логотип 

6 Pages
scroll

No Preview Available !

TMU6N70G Даташит, Описание, Даташиты
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMD6N70(G)/TMU6N70(G)
VDSS = 770 V @Tjmax
ID = 5A
RDS(on) = 1.65 W(max) @ VGS= 10 V
D-PAK
I-PAK
D
G
S
Device
TMD6N70/TMU6N70
TMD6N70G/TMU6N70G
Package
D-PAK/I-PAK
D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMD6N70/TMU6N70
TMD6N70G/TMU6N70G
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMD6N70(G)/TMU6N70(G)
700
±30
5
3.14
20
188
5
12
120
0.96
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
January 2012 : Rev 1
www.trinnotech.com
TMD6N70(G)/TMU6N70(G)
1.04
110
Unit
/W
/W
1/6









No Preview Available !

TMU6N70G Даташит, Описание, Даташиты
TMD6N70(G)/TMU6N70(G)
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 700 --
--
V
Zero Gate Voltage Drain Current
VDS = 700 V, VGS = 0 V
--
IDSS
VDS = 560 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.5 A
VDS = 30 V, ID = 2.5 A
2 -- 4 V
-- 1.42 1.65 W
-- 7.6 --
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD = 350 V, ID = 5 A,
RG = 25
VDS = 560V, ID = 5 A,
VGS = 10 V
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 5 A
VGS = 0 V, IS = 5 A
dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=14mH, I AS = 5A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD ≤ 5A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-- 1120 --
-- 91 --
-- 6.3 --
-- 26 --
-- 17 --
-- 85 --
-- 120 --
-- 17 --
-- 3.7 --
-- 4.3 --
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-- -- 5 A
-- -- 20 A
-- -- 1.5 V
-- 342 --
ns
-- 2.8 -- µC
January 2012 : Rev 1
www.trinnotech.com
2/6









No Preview Available !

TMU6N70G Даташит, Описание, Даташиты
18
Top V =15.0V
GS
15
10.0V
8.0V
7.0V
6.5V
12 6.0V
Bottom 5.0V
9
6
3
1. T = 25
C
2. 250μ s Pulse Test
0
0 10 20 30 40 50
Drain-Source Voltage, V [V]
DS
TMD6N70(G)/TMU6N70(G)
V = 30V
DS
250 μ s Pulse Test
10
150
1 25
-55
0.1
2 4 6 8 10
Gate-Source Voltage, V [V]
GS
3.0
T = 25
J
2.5
2.0
1.5
1.0
0.5
0.0
0
2
V = 10V
GS
V = 20V
GS
4 6 8 10 12 14
Drain Current,I [A]
D
20
V = 0V
GS
250μ s Pulse Test
16
12
150
8 25
4
0
0.0 0.3 0.6 0.9 1.2 1.5
Source-Drain Voltage, V [V]
SD
1.8
1500
1000
500
0
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
V =0V
GS
f = 1 MHz
C
oss
C
rss
100 101
Drain-Source Voltage, V [V]
DS
12
I = 5A
D
10
8
6
4
2
0
0
V = 140V
DS
V = 350V
DS
V = 560V
DS
5 10 15
Total Gate Charge, Q [nC]
G
20
January 2012 : Rev 1
www.trinnotech.com
3/6










Скачать PDF:

[ TMU6N70G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
TMU6N70N-channel MOSFETTRinno
TRinno
TMU6N70GN-channel MOSFETTRinno
TRinno

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск