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TMPF6N70 PDF даташит

Спецификация TMPF6N70 изготовлена ​​​​«TRinno» и имеет функцию, называемую «N-channel MOSFET».

Детали детали

Номер произв TMPF6N70
Описание N-channel MOSFET
Производители TRinno
логотип TRinno логотип 

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TMPF6N70 Даташит, Описание, Даташиты
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP6N70(G)/TMPF6N70(G)
BVDSS
700V
N-channel MOSFET
ID RDS(on)
5.0A
<1.65W
Device
TMP6N70 / TMPF6N70
TMP6N70G / TMPF6N70G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP6N70 / TMPF6N70
TMP6N70G / TMPF6N70G
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP6N70(G) TMPF6N70(G)
700
±30
5 5*
3.14 3.14
20 20
188
5
12
120 39
0.96 0.31
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
May 2012 : Rev1
www.trinnotech.com
TMP6N70(G)
1.04
62.5
TMPF6N70(G)
3.2
62.5
Unit
/W
/W
1/7









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TMPF6N70 Даташит, Описание, Даташиты
TMP6N70(G)/TMPF6N70(G)
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 700 --
--
V
Zero Gate Voltage Drain Current
VDS = 700 V, VGS = 0 V
--
IDSS
VDS = 560 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.5 A
VDS = 30 V, ID = 2.5 A
2 -- 4 V
-- 1.42 1.65 W
-- 7.6 --
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD = 350 V, ID = 5 A,
RG = 25
VDS = 560 V, ID = 5 A,
VGS = 10 V
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 5 A
VGS = 0 V, IS = 5 A
dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=14mH, I AS = 5A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD 5A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
1120 1500
pF
-- 91 122 pF
-- 6.3 8.5 pF
-- 26 62 ns
-- 17 44 ns
-- 85 180 ns
--
120 250
ns
-- 17 23 nC
-- 3.7 -- nC
-- 4.3 -- nC
-- -- 5 A
-- -- 20 A
-- -- 1.5 V
-- 342 --
ns
-- 2.8 -- µC
May 2012 : Rev1
www.trinnotech.com
2/7









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TMPF6N70 Даташит, Описание, Даташиты
TMP6N70(G)/TMPF6N70(G)
May 2012 : Rev1
www.trinnotech.com
3/7










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Номер в каталогеОписаниеПроизводители
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