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Datasheet TMD3N80G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TMD3N80G | N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMD3N80G/TMU3N80G
VDSS = 880 V @Tjmax ID = 3A RDS(on) = 4.2 W(max) @ VGS= 10 V
D-PAK
I-PAK
D
Device TMD3N80G/TMU3N80G
Package D-PAK/I-PAK
G |  TRinno | mosfet |
TMD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TMD0507-2 | Power GaAs MMIC Toshiba data | | |
| 2 | TMD0507-2A | Microwave Power GaAs MMIC Toshiba data | | |
| 3 | TMD0708-2 | POWER GAAS MMIC Toshiba Semiconductor data | | |
| 4 | TMD1013-1 | MICROWAVE POWER MMIC AMPLIFIER Toshiba Semiconductor amplifier | | |
| 5 | TMD1013-1-431 | Microwave Power MMIC Amplifier MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES High Power P1dB=33dBm(TYP.) High Power Added Efficiency ηadd=14%(TYP.)
TMD1013-1-431 TMD1013-1-431
High Gain
G1dB=25dB(TYP.)
Operable Frequency : f=10.0-12.0GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C) CHARA Toshiba amplifier | | |
| 6 | TMD1414-2C | MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA
TMD1414-2C
FEATURES
n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( T Toshiba Semiconductor amplifier | | |
| 7 | TMD16N25Z | N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
D-PAK
TMD16N25Z(G)/TMU16N25Z(G)
BVDSS 250V
N-channel MOSFET ID RDS(on) 16A <0.24W
I-PAK
Device TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG
TRinno mosfet | |
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