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TMPF3N80G PDF даташит

Спецификация TMPF3N80G изготовлена ​​​​«TRinno» и имеет функцию, называемую «N-channel MOSFET».

Детали детали

Номер произв TMPF3N80G
Описание N-channel MOSFET
Производители TRinno
логотип TRinno логотип 

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TMPF3N80G Даташит, Описание, Даташиты
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP3N80/TMPF3N80
TMP3N80G/TMPF3N80G
VDSS = 880 V @Tjmax
ID = 3A
RDS(ON) = 4.2 W(max) @ VGS= 10 V
D
G
Device
TMP3N80 / TMPF3N80
TMP3N80G / TMPF3N80G
Package
TO-220 / TO-220F
TO-220 / TO-220F
S
Marking
TMP3N80 / TMPF3N80
TMP3N80G / TMPF3N80G
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
January 2013 : Rev. 1.0
Symbol
RqJC
RqJA
www.trinnotech.com
TMP3N80(G)
TMPF3N80(G)
800
±30
3 3*
1.83 1.83 *
12 12*
283
3
9.4
94 32
0.75 0.25
4.5
-55~150
300
TMP3N80(G)
1.33
62.5
TMPF3N80(G)
3.9
62.5
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Unit
/W
/W
1/7









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TMPF3N80G Даташит, Описание, Даташиты
TMP3N80/TMPF3N80
TMP3N80G/TMPF3N80G
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 800 --
--
V
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
IDSS
VDS = 640 V, TC = 125°C
--
-- 10 µA
-- 100 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.5 A
VDS = 30 V, ID = 1.5 A
2 -- 4
-- 3.36 4.2
-- 3.7 --
V
W
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
ISM
VSD
trr
Qrr
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 400 V, ID = 3 A,
RG = 25
VDS = 640V, ID = 3 A,
VGS = 10 V
-- 696 --
-- 65 --
-- 10.2 --
-- 48 --
-- 36 --
-- 106 --
-- 41 --
-- 19 --
-- 4 --
-- 7.6 --
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
----
----
VGS = 0 V, IS = 3 A
VGS = 0 V, IS = 3 A
dIF / dt = 100 A/µs
-- -- 3 A
-- -- 12 A
-- -- 1.5 V
-- 372 --
ns
-- 1.8 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L= 59mH, I AS = 3A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD ≤ 3A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
January 2013 : Rev. 1.0
www.trinnotech.com
2/7









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TMPF3N80G Даташит, Описание, Даташиты
8
Top V =15.0V
GS
10.0V
8.0V
6 7.0V
6.5V
6.0V
Bottom 5.0V
4
2
1. T = 25
C
2. 250μ s Pulse Test
0
0 10 20 30 40 50
Drain-Source Voltage, V [V]
DS
TMP3N80/TMPF3N80
TMP3N80G/TMPF3N80G
V = 30V
DS
250 μ s Pulse Test
10
150
25
1
-55
0.1
0 2 4 6 8 10
Gate-Source Voltage, V [V]
GS
6
T = 25
J
5
4
3
V = 10V
GS
V = 20V
GS
2
1
0246
Drain Current,I [A]
D
8
12
V = 0V
GS
250μ s Pulse Test
10
8
6
4
2
150
25
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, V [V]
SD
2000
1500
1000
500
0
10-1
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
V =0V
GS
f = 1 MHz
C
rss
C
oss
C
iss
100 101
Drain-Source Voltage, V [V]
DS
12
I = 3A
D
10
8
V = 160V
DS
V = 400V
DS
6 V = 640V
DS
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24
Total Gate Charge, Q [nC]
G
January 2013 : Rev. 1.0
www.trinnotech.com
3/7










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