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Número de pieza | TMPF8N80 | |
Descripción | N-channel MOSFET | |
Fabricantes | TRinno | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TMPF8N80 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP8N80(G)/TMPF8N80(G)
BVDSS
800V
N-channel MOSFET
ID RDS(on)
8A < 1.4W
Device
TMP8N80 / TMPF8N80
TMP8N80G / TMPF8N80G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP8N80 / TMPF8N80
TMP8N80G / TMPF8N80G
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP8N80(G)
TMPF8N80G)
800
±30
8 8*
4.9 4.9 *
32 32 *
201
8
25
250 40.3
2 0.32
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
February 2013 : Rev 1.0
www.trinnotech.com
TMP8N80(G)
0.5
62.5
TMPF8N80(G)
3.1
62.5
Unit
℃/W
℃/W
1/7
1 page TMP8N80(G)/TMPF8N80(G)
TMP8N80(G)
TMPF8N80(G)
February 2013 : Rev 1.0
www.trinnotech.com
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TMPF8N80.PDF ] |
Número de pieza | Descripción | Fabricantes |
TMPF8N80 | N-channel MOSFET | TRinno |
TMPF8N80G | N-channel MOSFET | TRinno |
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