TMP8N80 PDF даташит
Спецификация TMP8N80 изготовлена «TRinno» и имеет функцию, называемую «N-channel MOSFET». |
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Детали детали
Номер произв | TMP8N80 |
Описание | N-channel MOSFET |
Производители | TRinno |
логотип |
7 Pages
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP8N80(G)/TMPF8N80(G)
BVDSS
800V
N-channel MOSFET
ID RDS(on)
8A < 1.4W
Device
TMP8N80 / TMPF8N80
TMP8N80G / TMPF8N80G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP8N80 / TMPF8N80
TMP8N80G / TMPF8N80G
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP8N80(G)
TMPF8N80G)
800
±30
8 8*
4.9 4.9 *
32 32 *
201
8
25
250 40.3
2 0.32
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
February 2013 : Rev 1.0
www.trinnotech.com
TMP8N80(G)
0.5
62.5
TMPF8N80(G)
3.1
62.5
Unit
℃/W
℃/W
1/7
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TMP8N80(G)/TMPF8N80(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 800 --
--
V
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
IDSS
VDS = 640 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
2
--
4
V
RDS(on)
VGS = 10 V, ID = 4 A
-- 1.1 1.4 W
gFS
VDS = 30 V, ID = 4 A
-- 7 -- S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD = 400 V, ID = 8 A,
RG = 25 Ω
VDS = 640 V, ID = 8 A,
VGS = 10 V
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 8 A
VGS = 0 V, IS = 8 A
dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L = 5.9mH, I AS = 8A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃
3 I SD ≤ 8A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-- 1921 --
-- 146 --
-- 12 --
-- 31 --
-- 30 --
-- 172 --
-- 37 --
-- 46 --
-- 7 --
-- 15 --
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-- -- 8 A
-- -- 32 A
-- -- 1.5 V
-- 479 --
ns
-- 5.5 -- µC
February 2013 : Rev 1.0
www.trinnotech.com
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TMP8N80(G)/TMPF8N80(G)
February 2013 : Rev 1.0
www.trinnotech.com
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