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PDF TMP9N90 Data sheet ( Hoja de datos )
| Número de pieza | TMP9N90 | |
| Descripción | N-channel MOSFET | |
| Fabricantes | TRinno | |
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP9N90/TMPF9N90
TMP9N90G/TMPF9N90G
VDSS = 990 V @Tjmax
ID = 9A
RDS(ON) = 1.4 W(max) @ VGS= 10 V
D
G
Device
TMP9N90 / TMPF9N90
TMP9N90G / TMPF9N90G
Package
TO-220 / TO-220F
TO-220 / TO-220F
S
Marking
TMP9N90 / TMPF9N90
TMP9N90G / TMPF9N90G
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
November 2011 : Rev1
Symbol
RqJC
RqJA
www.trinnotech.com
TMP9N90(G)
TMPF9N90(G)
900
±30
9 9*
5.7 5.7 *
36 36*
221
9
29
290
48
2.32 0.38
4.5
-55~150
300
TMP9N90(G)
0.43
62.5
TMPF9N90(G)
2.6
62.5
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Unit
℃/W
℃/W
1/5
1 page  
TMP9N90/TMPF9N90
TMP9N90G/TMPF9N90G
Duty=0.5
10-1 0.2
0.1
0.05
0.02
10-2 0.01
TMP9N90(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 0.43 ℃/W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
Duty=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
10-4
TMPF9N90(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 2.6 ℃/W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
November 2011 : Rev1
www.trinnotech.com
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TMP9N90.PDF ] | |
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