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PDF TMAN9N90AZ Data sheet ( Hoja de datos )
| Número de pieza | TMAN9N90AZ | |
| Descripción | N-channel MOSFET | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Features
Low gate charge
Improved dv/dt capability
Improved ESD performance
RoHS compliant
JEDEC Qualification
BVDSS
900V
TMAN9N90AZ
N-channel MOSFET
ID RDS(on)
9A <1.4W
Ordering Part Number
TMAN9N90AZ
Package
TO-3PN
Marking
TMAN9N90AZ
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
September 2013 : Rev 0.0
www.trinnotech.com
Value
900
±30
9
5.9
36
456
9
31.2
312
2.5
4.5
-55~150
300
Value
0.4
62.5
Remark
RoHS
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Unit
℃/W
℃/W
1/5
1 page  
TO-3PN MECHANICAL DATA
TMAN9N90AZ
Disclaimer :
TRinno technology reserves the right to make changes without notice to products herein to improve reliability, performance, or design.
The information given in this document is believed to be accurate and reliable. However, it shall in no event be regarded as a
guarantee of conditions and characteristics. With respect to any information regarding the application of the device, TRinno
technology hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-
infringement of patent rights of any third party.
September 2013 : Rev 0.0
www.trinnotech.com
5/5
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